MT40A1G8WE-075E AIT:B
- Mfr.Part #
- MT40A1G8WE-075E AIT:B
- Manufacturer
- Micron Technology
- Package / Case
- 78-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 8GBIT PARALLEL 78FBGA
- Stock
- 21,806
- In Stock :
- 21,806
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Max (Vsup) :
- 1.26V
- Memory Interface :
- Parallel
- Memory Density :
- 8589934592 bit
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- SYNCHRONOUS
- Clock Frequency :
- 1.33GHz
- Height Seated (Max) :
- 1.2mm
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Functions :
- 1
- Length :
- 12mm
- Terminal Position :
- BOTTOM
- Packaging :
- Tray
- Memory Size :
- 8Gb 1G x 8
- ECCN Code :
- EAR99
- Organization :
- 1GX8
- Peak Reflow Temperature (Cel) :
- 260
- Memory Width :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Supply Voltage :
- 1.2V
- JESD-30 Code :
- R-PBGA-B78
- Width :
- 8mm
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- RoHS Compliant
- Access Mode :
- MULTI BANK PAGE BURST
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 78
- Memory Format :
- DRAM
- Memory Type :
- Volatile
- Operating Temperature :
- -40°C~95°C TC
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Reach Compliance Code :
- Compliant
- Number of Ports :
- 1
- Supply Voltage-Min (Vsup) :
- 1.14V
- JESD-609 Code :
- e1
- Terminal Pitch :
- 0.8mm
- Package / Case :
- 78-TFBGA
- Voltage - Supply :
- 1.14V~1.26V
- Datasheets
- MT40A1G8WE-075E AIT:B

Memory Micron Technology MT40A1G8WE-075E AIT:B Overview
The Memory Micron Technology MT40A1G8WE-075E AIT:B is a cutting-edge Integrated Circuit (IC) DRAM with a robust 8Gbit parallel processing capability, housed in a compact 78FBGA package. Designed by Micron Technology, a leader in memory innovation, this product is engineered to meet the high-speed performance and reliability demands of modern applications. Its high-density configuration makes it particularly suited for applications that require extensive data storage and rapid access times, facilitating enhanced system efficiency and performance.
MT40A1G8WE-075E AIT:B Features
This DRAM IC features a dense 8 Gbit configuration, offering substantial storage capacity for data-intensive operations. The parallel interface ensures high-speed data transfer rates, which is essential for both computing efficiency and performance in complex systems. The compact 78FBGA package not only minimizes space on the circuit board but also provides robust protection for the IC, ensuring its reliability and durability in a wide range of environmental conditions.
MT40A1G8WE-075E AIT:B Applications
- Enterprise Servers: Ideal for handling large databases and complex computations, this DRAM enhances server efficiency and response times, making it suitable for enterprise-level applications.
- High-Performance Computing (HPC): Provides the necessary bandwidth and storage capacity to manage and execute high-level computational tasks required in scientific research and simulations.
- Networking Infrastructure: Supports the demanding memory needs of high-speed network equipment, ensuring quick data throughput and improved overall network performance.
- Data Centers: Offers scalability and speed in processing large amounts of data, crucial for cloud storage solutions and big data analytics platforms.
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