MT40A1G8WE-075E AIT:B

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Mfr.Part #
MT40A1G8WE-075E AIT:B
Manufacturer
Micron Technology
Package / Case
78-TFBGA
Datasheet
Download
Description
IC DRAM 8GBIT PARALLEL 78FBGA
Stock
21,806
In Stock :
21,806

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Manufacturer :
Micron Technology
Product Category :
Memory
Supply Voltage-Max (Vsup) :
1.26V
Memory Interface :
Parallel
Memory Density :
8589934592 bit
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Mode :
SYNCHRONOUS
Clock Frequency :
1.33GHz
Height Seated (Max) :
1.2mm
Additional Feature :
AUTO/SELF REFRESH
Number of Functions :
1
Length :
12mm
Terminal Position :
BOTTOM
Packaging :
Tray
Memory Size :
8Gb 1G x 8
ECCN Code :
EAR99
Organization :
1GX8
Peak Reflow Temperature (Cel) :
260
Memory Width :
8
Time@Peak Reflow Temperature-Max (s) :
30
Supply Voltage :
1.2V
JESD-30 Code :
R-PBGA-B78
Width :
8mm
Factory Lead Time :
13 Weeks
RoHS Status :
RoHS Compliant
Access Mode :
MULTI BANK PAGE BURST
Surface Mount :
yes
Mounting Type :
Surface Mount
Number of Terminations :
78
Memory Format :
DRAM
Memory Type :
Volatile
Operating Temperature :
-40°C~95°C TC
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Reach Compliance Code :
Compliant
Number of Ports :
1
Supply Voltage-Min (Vsup) :
1.14V
JESD-609 Code :
e1
Terminal Pitch :
0.8mm
Package / Case :
78-TFBGA
Voltage - Supply :
1.14V~1.26V
Introducing Memory Micron Technology MT40A1G8WE-075E AIT:B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:78, Operating Temperature:-40°C~95°C TC, Package / Case:78-TFBGA, MT40A1G8WE-075E AIT:B pinout, MT40A1G8WE-075E AIT:B datasheet PDF, MT40A1G8WE-075E AIT:B amp .Beyond Memory Micron Technology MT40A1G8WE-075E AIT:B ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT40A1G8WE-075E AIT:B


Memory Micron Technology MT40A1G8WE-075E AIT:B Overview

The Memory Micron Technology MT40A1G8WE-075E AIT:B is a cutting-edge Integrated Circuit (IC) DRAM with a robust 8Gbit parallel processing capability, housed in a compact 78FBGA package. Designed by Micron Technology, a leader in memory innovation, this product is engineered to meet the high-speed performance and reliability demands of modern applications. Its high-density configuration makes it particularly suited for applications that require extensive data storage and rapid access times, facilitating enhanced system efficiency and performance.

MT40A1G8WE-075E AIT:B Features

This DRAM IC features a dense 8 Gbit configuration, offering substantial storage capacity for data-intensive operations. The parallel interface ensures high-speed data transfer rates, which is essential for both computing efficiency and performance in complex systems. The compact 78FBGA package not only minimizes space on the circuit board but also provides robust protection for the IC, ensuring its reliability and durability in a wide range of environmental conditions.

MT40A1G8WE-075E AIT:B Applications

  • Enterprise Servers: Ideal for handling large databases and complex computations, this DRAM enhances server efficiency and response times, making it suitable for enterprise-level applications.
  • High-Performance Computing (HPC): Provides the necessary bandwidth and storage capacity to manage and execute high-level computational tasks required in scientific research and simulations.
  • Networking Infrastructure: Supports the demanding memory needs of high-speed network equipment, ensuring quick data throughput and improved overall network performance.
  • Data Centers: Offers scalability and speed in processing large amounts of data, crucial for cloud storage solutions and big data analytics platforms.
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Shipping Cost

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