MT28F008B3VP-9 B

Manufacturer :

Micron Technology

Product Category :

Memory

Published :

2002

Pin Count :

40

Supply Voltage-Min (Vsup) :

3V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Programming Voltage :

3V

Standby Current-Max :

0.000005A

Sector Size :

16K8K96K128K

JESD-30 Code :

R-PDSO-G40

Number of Sectors/Size :

1217

Data Polling :

No

Toggle Bit :

No

Peak Reflow Temperature (Cel) :

260

Memory Size :

8Mb 1M x 8

ECCN Code :

EAR99

Command User Interface :

yes

Qualification Status :

Not Qualified

Operating Temperature :

0°C~70°C TA

Operating Mode :

ASYNCHRONOUS

Organization :

1MX8

Supply Voltage-Max (Vsup) :

3.6V

Memory Interface :

Parallel

Terminal Finish :

MATTE TIN

Length :

18.4mm

Supply Voltage :

3.3V

Packaging :

Bulk

Voltage - Supply :

3V~3.6V

Memory Width :

8

Write Cycle Time - Word, Page :

90ns

Memory Type :

Non-Volatile

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.5mm

Height Seated (Max) :

1.2mm

Terminal Position :

Dual

Boot Block :

BOTTOM

Base Part Number :

MT28F008B3

Number of Functions :

1

HTS Code :

8542.32.00.51

Width :

10mm

Memory Format :

Flash

Number of Terminations :

40

Surface Mount :

yes

JESD-609 Code :

e3

Memory Density :

8388608 bit

Additional Feature :

BOTTOM BOOT BLOCK

Supply Current-Max :

0.025mA

Package / Case :

40-TFSOP (0.724, 18.40mm Width)

Access Time (Max) :

90 ns

Power Supplies :

3.3V