MT28EW01GABA1HJS-0SIT

Manufacturer :

Micron Technology

Product Category :

Memory

Operating Mode :

ASYNCHRONOUS

Supply Voltage-Min (Vsup) :

2.7V

Memory Interface :

Parallel

Number of Terminations :

56

Number of Functions :

1

Terminal Pitch :

0.5mm

Published :

2016

Supply Voltage :

3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Write Cycle Time - Word, Page :

60ns

Surface Mount :

yes

Height Seated (Max) :

1.2mm

Packaging :

Tray

Organization :

64MX16

Memory Format :

Flash

Voltage - Supply :

2.7V~3.6V

Memory Type :

Non-Volatile

Operating Temperature :

-40°C~85°C TA

Factory Lead Time :

6 Weeks

Access Time :

95ns

Length :

18.4mm

Supply Voltage-Max (Vsup) :

3.6V

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G56

Programming Voltage :

3V

Memory Density :

1073741824 bit

Memory Width :

16

RoHS Status :

ROHS3 Compliant

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Terminal Finish :

Matte Tin (Sn)

Width :

14mm

Terminal Position :

Dual

Mounting Type :

Surface Mount

Memory Size :

1Gb 128M x 8 64M x 16