MT28F008B3VG-9 B
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- Mfr.Part #
- MT28F008B3VG-9 B
- Manufacturer
- Micron Technology
- Package / Case
- 40-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 8MBIT PARALLEL 40TSOP I
- Stock
- 26,913
- In Stock ：
- 26,913
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Max (Vsup) :
- 3.6V
- Qualification Status :
- Not Qualified
- Memory Format :
- Flash
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Terminal Pitch :
- 0.5mm
- Toggle Bit :
- No
- Reach Compliance Code :
- not_compliant
- Supply Current-Max :
- 0.025mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Memory Type :
- Non-Volatile
- Supply Voltage :
- 3.3V
- Packaging :
- Bulk
- Number of Terminations :
- 40
- Output Characteristics :
- 3-STATE
- Memory Width :
- 8
- HTS Code :
- 8542.32.00.51
- Number of Sectors/Size :
- 1217
- Sector Size :
- 16K8K96K128K
- JESD-609 Code :
- e0
- Memory Interface :
- Parallel
- Boot Block :
- BOTTOM
- Programming Voltage :
- 3V
- Base Part Number :
- MT28F008B3
- Package / Case :
- 40-TFSOP (0.724, 18.40mm Width)
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Organization :
- 1MX8
- Terminal Position :
- Dual
- Length :
- 18.4mm
- Published :
- 2002
- Voltage - Supply :
- 3V~3.6V
- Height Seated (Max) :
- 1.2mm
- Supply Voltage-Min (Vsup) :
- 3V
- Peak Reflow Temperature (Cel) :
- 235
- Memory Size :
- 8Mb 1M x 8
- Memory Density :
- 8388608 bit
- Standby Current-Max :
- 0.000005A
- Operating Mode :
- ASYNCHRONOUS
- Number of Functions :
- 1
- Power Supplies :
- 3.3V
- Width :
- 10mm
- Write Cycle Time - Word, Page :
- 90ns
- Data Polling :
- No
- Additional Feature :
- 100,000 ERASE CYCLES; BOTTOM BOOT BLOCK
- ECCN Code :
- EAR99
- Command User Interface :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- 0°C~70°C TA
- Access Time (Max) :
- 90 ns
- JESD-30 Code :
- R-PDSO-G40
- Pin Count :
- 40
- Datasheets
- MT28F008B3VG-9 B
Memory Micron Technology MT28F008B3VG-9 B Overview
The Memory Micron Technology MT28F008B3VG-9 B is a high-performance 8 Mbit Flash memory device designed for advanced electronic systems requiring reliable and durable storage. Manufactured by Micron Technology, this IC employs a parallel interface and is encapsulated in a compact 40TSOP package, ensuring robust operation and seamless integration into a variety of hardware architectures. Its capacity to handle extensive read/write cycles makes it an ideal choice for applications that demand long-term data integrity and speed. This product stands out in the market for its blend of efficiency, durability, and performance, catering to businesses seeking bulk purchases for sophisticated technology solutions.
MT28F008B3VG-9 B Features
The MT28F008B3VG-9 B Flash memory chip boasts several key features, including its 8 Mbit storage capacity, parallel interface for faster data transfer rates, and the compact 40TSOP package that fits seamlessly into smaller form factor designs. This device is specifically engineered to provide a reliable storage solution with a high endurance level and robust data retention capabilities.
MT28F008B3VG-9 B Applications
- Embedded Systems: Utilized in microcontroller-based applications, providing the necessary data storage for firmware and application code which are crucial in automation and control systems.
- Consumer Electronics: Applied in devices such as set-top boxes and digital cameras, where reliable and quick access to stored data enhances user experience and device functionality.
- Automotive Electronics: Serves as a dependable storage solution for automotive applications, including engine control units and infotainment systems, where durability and data integrity are paramount.
- Telecommunication: Employed in telecommunications equipment for storing firmware that facilitates network operations and connectivity enhancements.
- Industrial Applications: Integral to industrial devices that require high data reliability under harsh conditions, contributing to better control and operational efficiency.
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