MT28EW512ABA1HPN-0SIT
- Mfr.Part #
- MT28EW512ABA1HPN-0SIT
- Manufacturer
- Micron Technology
- Package / Case
- 56-VFBGA
- Datasheet
- Download
- Description
- IC FLSH 512MBIT PARALLEL 56VFBGA
- Stock
- 41,914
- In Stock :
- 41,914
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Operating Temperature :
- -40°C~85°C TA
- Packaging :
- Tray
- Operating Mode :
- ASYNCHRONOUS
- Voltage - Supply :
- 2.7V~3.6V
- Programming Voltage :
- 3V
- Height Seated (Max) :
- 1mm
- Surface Mount :
- yes
- Supply Voltage-Max (Vsup) :
- 3.6V
- Mounting Type :
- Surface Mount
- Memory Type :
- Non-Volatile
- Factory Lead Time :
- 9 Weeks
- Width :
- 7mm
- Number of Terminations :
- 56
- Alternate Memory Width :
- 8
- Supply Voltage-Min (Vsup) :
- 2.7V
- Memory Format :
- Flash
- Length :
- 9mm
- Supply Voltage :
- 3V
- Memory Size :
- 512Mb 64M x 8 32M x 16
- Memory Density :
- 536870912 bit
- Package / Case :
- 56-VFBGA
- Access Time :
- 95ns
- JESD-30 Code :
- R-PBGA-B56
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Width :
- 16
- Terminal Pitch :
- 0.8mm
- Memory Interface :
- Parallel
- Write Cycle Time - Word, Page :
- 60ns
- Number of Functions :
- 1
- Organization :
- 32MX16
- Terminal Position :
- BOTTOM
- Datasheets
- MT28EW512ABA1HPN-0SIT
Memory IC 9mm mm
MT28EW512ABA1HPN-0SIT Overview
Non-Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 56-VFBGA case. There is an 512Mb 64M x 8 32M x 16 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 56 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply. A programming voltage of 3V is needed to alter the state of certain nonvolatile memory arrays.
MT28EW512ABA1HPN-0SIT Features
Package / Case: 56-VFBGA
MT28EW512ABA1HPN-0SIT Applications
There are a lot of Micron Technology Inc.
MT28EW512ABA1HPN-0SIT Memory applications.
- telecommunications
- workstations,
- DVD disk buffer
- data buffer
- nonvolatile BIOS memory
- Camcorders
- embedded logic
- eDRAM
- graphics card
- hard disk drive (HDD)
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