MSJP11N65-BP
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- Mfr.Part #
- MSJP11N65-BP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11A TO220AB
- Stock
- 4,926
- In Stock ：
- 4,926
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 901pF @ 50V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 78W Tc
- Drain to Source Voltage (Vdss) :
- 650V
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5.5A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 11A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Datasheets
- MSJP11N65-BP
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N-Channel 380m Ω @ 5.5A, 10V ±30V 901pF @ 50V 21nC @ 10V 650V TO-220-3
MSJP11N65-BP Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 901pF @ 50V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
MSJP11N65-BP Features
a 650V drain to source voltage (Vdss)
MSJP11N65-BP Applications
There are a lot of Micro Commercial Co
MSJP11N65-BP applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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