MSD1328-RT1G

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Mfr.Part #
MSD1328-RT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 20V 0.5A SC59
Stock
2,866
In Stock :
2,866

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Voltage - Collector Emitter Breakdown (Max) :
20V
Vce Saturation (Max) @ Ib, Ic :
400mV @ 20mA, 500mA
Power - Max :
200mW
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
NPN
Configuration :
Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Pin Count :
3
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Current - Collector (Ic) (Max) :
500mA
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
3
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
JESD-30 Code :
R-PDSO-G3
Operating Temperature :
150°C TJ
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Qualification Status :
COMMERCIAL
Terminal Finish :
MATTE TIN
Terminal Position :
Dual
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e3
Pbfree Code :
No
Datasheets
MSD1328-RT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MSD1328-RT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, MSD1328-RT1G pinout, MSD1328-RT1G datasheet PDF, MSD1328-RT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MSD1328-RT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MSD1328-RT1G


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MSD1328-RT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.When VCE saturation is 400mV @ 20mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 20V maximal voltage - Collector Emitter Breakdown.

MSD1328-RT1G Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 20mA, 500mA


MSD1328-RT1G Applications


There are a lot of Rochester Electronics, LLC
MSD1328-RT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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