MSC2712GT1
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- Mfr.Part #
- MSC2712GT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS GP NPN 50V SC59
- Stock
- 20,743
- In Stock ：
- 20,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Power Dissipation :
- 200mW
- Number of Pins :
- 3
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 500mV
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 50V
- Base Part Number :
- MSC2712
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Max Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 50MHz
- JESD-609 Code :
- e3
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Datasheets
- MSC2712GT1
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MSC2712GT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 6V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MSC2712GT1G Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
MSC2712GT1G Applications
There are a lot of ON Semiconductor
MSC2712GT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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