MSB709-RT1G

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Mfr.Part #
MSB709-RT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 45V 0.1A SC59
Stock
18,936
In Stock :
18,936

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
yes
Terminal Position :
Dual
Transistor Application :
AMPLIFIER
Mounting Type :
Surface Mount
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Power - Max :
200mW
Polarity/Channel Type :
PNP
Terminal Form :
Gull wing
Current - Collector (Ic) (Max) :
100mA
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
45V
Pin Count :
3
JESD-30 Code :
R-PDSO-G3
Pbfree Code :
yes
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
100nA
Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Reach Compliance Code :
Unknown
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Qualification Status :
COMMERCIAL
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
210 @ 2mA 10V
Transistor Element Material :
SILICON
Datasheets
MSB709-RT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MSB709-RT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, MSB709-RT1G pinout, MSB709-RT1G datasheet PDF, MSB709-RT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MSB709-RT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MSB709-RT1G


PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MSB709-RT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

MSB709-RT1G Features


the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA


MSB709-RT1G Applications


There are a lot of Rochester Electronics, LLC
MSB709-RT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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