MSB709

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Mfr.Part #
MSB709
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
PDQ - SMALL SIG GEN PURP
Stock
42,636
In Stock :
42,636

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
JESD-30 Code :
R-PDSO-G3
Pbfree Code :
No
Pin Count :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
210 @ 2mA 10V
JESD-609 Code :
e0
Reach Compliance Code :
Unknown
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Transistor Type :
PNP
Qualification Status :
COMMERCIAL
Terminal Finish :
TIN LEAD
Number of Terminations :
3
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
30
Number of Elements :
1
Polarity/Channel Type :
PNP
Transistor Application :
AMPLIFIER
Current - Collector (Ic) (Max) :
100mA
Peak Reflow Temperature (Cel) :
240
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Current - Collector Cutoff (Max) :
100nA
Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
45V
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
Terminal Position :
Dual
Datasheets
MSB709
Introducing Transistors - Bipolar (BJT) - Single onsemi MSB709 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, MSB709 pinout, MSB709 datasheet PDF, MSB709 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MSB709 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MSB709-RT1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 2mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 100mA.Device displays Collector Emitter Breakdown (45V maximal voltage).

MSB709-RT1 Features


the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA


MSB709-RT1 Applications


There are a lot of Rochester Electronics, LLC
MSB709-RT1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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