MSA1162YT1
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- Mfr.Part #
- MSA1162YT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A SC59
- Stock
- 37,172
- In Stock ：
- 37,172
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- SC-59
- Frequency - Transition :
- 80MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Power - Max :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- MSA1162YT1
PNP 150°C TJ 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MSA1162YT1 Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.Product comes in the supplier's device package SC-59.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
MSA1162YT1 Features
the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the supplier device package of SC-59
MSA1162YT1 Applications
There are a lot of Rochester Electronics, LLC
MSA1162YT1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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