MSA1162GT1
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- Mfr.Part #
- MSA1162GT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS GP PNP 50V SC59
- Stock
- 30,370
- In Stock ：
- 30,370
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Max Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- 500mV
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Voltage - Rated DC :
- -50V
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 100mA
- Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Pbfree Code :
- yes
- Published :
- 2006
- Transition Frequency :
- 80MHz
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 80MHz
- hFE Min :
- 200
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -100mA
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- Base Part Number :
- MSA1162
- Frequency :
- 80MHz
- Max Breakdown Voltage :
- 50V
- Datasheets
- MSA1162GT1
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MSA1162GT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 100mA.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 80MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
MSA1162GT1G Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
a transition frequency of 80MHz
MSA1162GT1G Applications
There are a lot of ON Semiconductor
MSA1162GT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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