MRFE6VS25LR5
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- Mfr.Part #
- MRFE6VS25LR5
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-360
- Datasheet
- Download
- Description
- FET RF 133V 512MHZ NI360L
- Stock
- 2,037
- In Stock ：
- 2,037
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Gain :
- 25.9dB
- Package / Case :
- NI-360
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Voltage - Test :
- 50V
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- Power - Output :
- 25W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- Flat
- Voltage - Rated :
- 133V
- JESD-30 Code :
- R-PDFM-F2
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Configuration :
- Single
- Current - Test :
- 10mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- LDMOS
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- HTS Code :
- 8541.29.00.75
- Base Part Number :
- MRFE6VS25
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 133V
- Operating Temperature (Max) :
- 150°C
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature (Min) :
- -40°C
- Frequency :
- 512MHz
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Datasheets
- MRFE6VS25LR5
MRFE6VS25LR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRFE6VS25LR5 Description
MRFE6VS25LR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRFE6VS25LR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VS25LR5 has the common source configuration.
MRFE6VS25LR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRFE6VS25LR5 Applications
ISM applications
DC large signal applications
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