MRFE6S9135HSR3

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

66V

HTS Code :

8541.29.00.75

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Operating Temperature (Max) :

225°C

Published :

2007

Number of Terminations :

2

Base Part Number :

MRFE6S9135

Current - Test :

1A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Frequency :

940MHz

Configuration :

Single

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-CDFP-F2

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

Terminal Form :

Flat

Surface Mount :

yes

Package / Case :

NI-880S

Transistor Type :

LDMOS

Power - Output :

39W

Voltage - Rated :

66V

Voltage - Test :

28V

ECCN Code :

EAR99

Gain :

21dB

Transistor Application :

AMPLIFIER

Qualification Status :

Not Qualified