MRF8S9200NR3

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Mfr.Part #
MRF8S9200NR3
Manufacturer
NXP Semiconductors
Package / Case
OM-780-2
Datasheet
Download
Description
FET RF 70V 940MHZ OM780-2
Stock
59
In Stock :
59

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Surface Mount :
yes
Additional Feature :
ESD PROTECTED
JESD-30 Code :
R-CDFP-F2
Factory Lead Time :
10 Weeks
Packaging :
Tape and Reel (TR)
Transistor Type :
LDMOS
Frequency :
940MHz
Terminal Position :
Dual
ECCN Code :
EAR99
Voltage - Rated :
70V
Number of Terminations :
2
Power - Output :
58W
Transistor Element Material :
SILICON
Operating Temperature (Max) :
225°C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
40
Voltage - Test :
28V
Polarity/Channel Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Case Connection :
SOURCE
Published :
2009
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Transistor Application :
AMPLIFIER
Package / Case :
OM-780-2
Terminal Form :
Flat
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Number of Elements :
1
JESD-609 Code :
e3
Configuration :
Single
DS Breakdown Voltage-Min :
70V
HTS Code :
8541.29.00.75
Qualification Status :
Not Qualified
Gain :
19.9dB
Peak Reflow Temperature (Cel) :
260
Current - Test :
1.4A
Datasheets
MRF8S9200NR3
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors MRF8S9200NR3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:OM-780-2, Gain:19.9dB, MRF8S9200NR3 pinout, MRF8S9200NR3 datasheet PDF, MRF8S9200NR3 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors MRF8S9200NR3 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors MRF8S9200NR3


MRF8S9200NR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

MRF8S9200NR3 Description


Constructed for 920 to 960 MHz CDMA base station applications. Suitable for all common cellular base station modulation formats in Class AB and Class C. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.



MRF8S9200NR3 Features


? Protection from Integrated ESD


? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range


? Plastic Package with 225°C Capability


? Created with Digital Predistortion Error Correction Systems in mind


? Designed with Doherty Applications in Mind



MRF8S9200NR3 Applications


Switching applications


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