MRF8S9102NR3
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- Mfr.Part #
- MRF8S9102NR3
- Manufacturer
- Freescale Semiconductor
- Package / Case
- OM-780-2
- Datasheet
- Download
- Description
- RF PFET ULTRA HIGH FREQUENCY B
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Freescale Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Power - Output :
- 28W
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 70V
- Number of Elements :
- 1
- Frequency :
- 920MHz
- Published :
- 2011
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Current - Test :
- 750mA
- Voltage - Test :
- 28V
- HTS Code :
- 8541.29.00.75
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 2
- Transistor Application :
- AMPLIFIER
- Package / Case :
- OM-780-2
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated :
- 70V
- Operating Temperature (Max) :
- 225°C
- JESD-30 Code :
- R-PDFP-F2
- Terminal Form :
- Flat
- Transistor Type :
- LDMOS
- Gain :
- 23.1dB
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Case Connection :
- SOURCE
- Datasheets
- MRF8S9102NR3
MRF8S9102NR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF8S9102NR3 Description
Designed for applications requiring CDMA base station frequencies between 865 and 960 MHz. Suitable for all common cellular base station modulation formats in Class AB and Class C. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRF8S9102NR3 Features
? PAR of 100 percent Guaranteed Output Power Capability Tested
? Characterized by Common Source S-Parameters and Series Equivalent Large Signal Impedance Parameters
? Internally Matching for User-Friendliness
? Protection from Integrated ESD
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
MRF8S9102NR3 Applications
Switching applications
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