MRF8S21200HSR6

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

ECCN Code :

EAR99

Transistor Type :

LDMOS (Dual)

Transistor Element Material :

SILICON

Frequency :

2.14GHz

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

DS Breakdown Voltage-Min :

65V

Case Connection :

SOURCE

Surface Mount :

yes

Terminal Form :

Flat

Number of Elements :

2

Gain :

18.1dB

Operating Temperature (Max) :

225°C

Voltage - Rated :

65V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-CDFP-F4

Power - Output :

48W

Voltage - Test :

28V

Current - Test :

1.4A

Package / Case :

NI-1230S

HTS Code :

8541.29.00.75

Packaging :

Tape and Reel (TR)

Configuration :

COMMON SOURCE, 2 ELEMENTS

Base Part Number :

MRF8S21200

Factory Lead Time :

10 Weeks