MRF8P9040GNR1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Power - Output :

4W

JESD-609 Code :

e3

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Voltage - Test :

28V

Operating Temperature (Max) :

225°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

HTS Code :

8541.29.00.75

Published :

2006

JESD-30 Code :

R-PDFM-G4

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Configuration :

COMMON SOURCE, 2 ELEMENTS

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

70V

Peak Reflow Temperature (Cel) :

260

Current - Test :

320mA

Case Connection :

SOURCE

Transistor Type :

LDMOS (Dual)

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Voltage - Rated :

70V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

960MHz

Package / Case :

TO-270BB

Number of Elements :

2

Transistor Element Material :

SILICON

Gain :

19.1dB