MRF8P20161HSR3

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

ENHANCEMENT MODE

Power - Output :

37W

Configuration :

COMMON SOURCE, 2 ELEMENTS

Operating Temperature (Max) :

225°C

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

JESD-30 Code :

R-CDFP-F4

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Case Connection :

SOURCE

Voltage - Rated :

65V

HTS Code :

8541.29.00.75

Terminal Form :

Flat

Transistor Type :

LDMOS (Dual)

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

65V

Package / Case :

NI-780S-4

Number of Elements :

2

Published :

2010

Gain :

16.4dB

Current - Test :

550mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Voltage - Test :

28V

Factory Lead Time :

10 Weeks

Number of Terminations :

4

Frequency :

1.92GHz

Transistor Element Material :

SILICON