MRF7S19170HSR3

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Base Part Number :

MRF7S19170

Operating Temperature (Max) :

225°C

Voltage - Test :

28V

Published :

2011

Power - Output :

50W

Factory Lead Time :

10 Weeks

JESD-30 Code :

R-CDFM-F2

Terminal Form :

Flat

Number of Terminations :

2

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Gain :

17.2dB

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated :

65V

Surface Mount :

yes

Current - Test :

1.4A

Package / Case :

NI-880S

Packaging :

Tape and Reel (TR)

Frequency :

1.99GHz

Case Connection :

SOURCE

Qualification Status :

Not Qualified

Configuration :

Single

HTS Code :

8541.29.00.75

Transistor Type :

LDMOS

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99