MRF6VP11KHR6
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- Mfr.Part #
- MRF6VP11KHR6
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-1230
- Datasheet
- Download
- Description
- FET RF 2CH 110V 130MHZ NI-1230
- Stock
- 26,116
- In Stock ：
- 26,116
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Gain :
- 26dB
- Voltage - Rated :
- 110V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Voltage - Test :
- 50V
- Base Part Number :
- MRF6VP11
- Package / Case :
- NI-1230
- Transistor Type :
- LDMOS (Dual)
- Published :
- 2010
- Frequency :
- 130MHz
- Power - Output :
- 1000W
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Current - Test :
- 150mA
- HTS Code :
- 8541.29.00.75
- Datasheets
- MRF6VP11KHR6
MRF6VP11KHR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF6VP11KHR6 Description
Primarily intended for pulse wideband applications at up to 150 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
MRF6VP11KHR6 Features
? characterized by large-signal series equivalent impedance parameters
? The capacity to operate CW systems with adequate cooling
? Up to a Maximum of 50 VDD Operation Qualified
? Protection from Integrated ESD
? Created with Push-Pull Operation in Mind
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? on reel-to-reel tape. 150 Units, 56 mm Tape Width, 13 inch Reel; R6 Suffix. 50 Units, 56 mm Tape Width, 13 Inch Reel; R5 Suffix.
MRF6VP11KHR6 Applications
Switching applications
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