MRF6VP11KHR5
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- Mfr.Part #
- MRF6VP11KHR5
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-1230S-4 GW
- Datasheet
- Download
- Description
- RF MOSFET LDMOS DL 50V NI1230S-4
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Operating Temperature (Max) :
- 225°C
- Power - Output :
- 1000W
- Published :
- 2010
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- NI-1230S-4 GW
- Gain :
- 26dB
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated :
- 110V
- Polarity/Channel Type :
- N-Channel
- HTS Code :
- 8541.29.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 10 Weeks
- Frequency :
- 130MHz
- Transistor Type :
- LDMOS (Dual)
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Current - Test :
- 150mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Voltage - Test :
- 50V
- ECCN Code :
- EAR99
- Base Part Number :
- MRF6VP11
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MRF6VP11KHR5
MRF6VP11KHR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF6VP11KHR5 Description
Primarily intended for pulse wideband applications at up to 150 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRF6VP11KHR5 Features
? characterized by large-signal series equivalent impedance parameters
? The capacity to operate CW systems with adequate cooling
? Up to a Maximum of 50 VDD Operation Qualified
? Protection from Integrated ESD
? Created with Push-Pull Operation in Mind
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? on reel-to-reel tape. 150 Units, 56 mm Tape Width, 13 inch Reel; R6 Suffix. 50 Units, 56 mm Tape Width, 13 Inch Reel; R5 Suffix.
MRF6VP11KHR5 Applications
Switching applications
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