MRF6V2300NBR5

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Mfr.Part #
MRF6V2300NBR5
Manufacturer
NXP Semiconductors
Package / Case
TO-272BB
Datasheet
Download
Description
FET RF 110V 220MHZ TO-272-4
Stock
24,377
In Stock :
24,377

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Frequency :
220MHz
Gain :
25.5dB
Qualification Status :
Not Qualified
HTS Code :
8541.29.00.75
Terminal Finish :
Matte Tin (Sn)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
110V
Package / Case :
TO-272BB
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Operating Temperature (Max) :
225°C
Case Connection :
SOURCE
Number of Terminations :
4
Voltage - Rated :
110V
Power - Output :
300W
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-270AA
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
10 Weeks
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
ECCN Code :
EAR99
Configuration :
Single
Voltage - Test :
50V
RoHS Status :
ROHS3 Compliant
Base Part Number :
MRF6V2300
Terminal Form :
Flat
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Type :
LDMOS
JESD-30 Code :
R-PDFM-F4
JESD-609 Code :
e3
Surface Mount :
yes
Published :
2006
Number of Elements :
1
Terminal Position :
Dual
Current - Test :
900mA
Datasheets
MRF6V2300NBR5
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors MRF6V2300NBR5 from Chip IC,where excellence meets affordability. This product stands out with its Gain:25.5dB, Package / Case:TO-272BB, Number of Terminations:4, Base Part Number:MRF6V2300, MRF6V2300NBR5 pinout, MRF6V2300NBR5 datasheet PDF, MRF6V2300NBR5 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors MRF6V2300NBR5 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors MRF6V2300NBR5


MRF6V2300NBR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

MRF6V2300NBR5 Description

 

MRF6V2300NBR5 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRF6V2300NBR5 N-channel transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2300NBR5 has the common source configuration.

 

 

MRF6V2300NBR5 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

 

 

MRF6V2300NBR5 Applications

 

ISM applications

DC large signal applications

 


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