MRF6V2150NBR1
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- Mfr.Part #
- MRF6V2150NBR1
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-272BB
- Datasheet
- Download
- Description
- FET RF 110V 220MHZ TO-272-4
- Stock
- 45
- In Stock ：
- 45
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Operating Temperature (Max) :
- 225°C
- JESD-30 Code :
- R-PDFM-F4
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Gain :
- 25dB
- Case Connection :
- SOURCE
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Configuration :
- Single
- DS Breakdown Voltage-Min :
- 110V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Published :
- 2006
- Factory Lead Time :
- 10 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power - Output :
- 150W
- Package / Case :
- TO-272BB
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Frequency :
- 220MHz
- HTS Code :
- 8541.29.00.75
- JESD-609 Code :
- e3
- Voltage - Test :
- 50V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Voltage - Rated :
- 110V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- N-Channel
- Base Part Number :
- MRF6V2150
- Transistor Type :
- LDMOS
- Current - Test :
- 450mA
- Datasheets
- MRF6V2150NBR1
MRF6V2150NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF6V2150NBR1 Description
MRF6V2150NBR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6V2150NBR1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2150NBR1 has the common source configuration.
MRF6V2150NBR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6V2150NBR1 Applications
ISM applications
DC large signal applications
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