MRF6V12250HSR5

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

LDMOS

RoHS Status :

ROHS3 Compliant

Current - Test :

100mA

Configuration :

Single

Operating Temperature (Max) :

225°C

Voltage - Test :

50V

Package / Case :

NI-780S

Transistor Element Material :

SILICON

Frequency :

1.03GHz

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

SOURCE

DS Breakdown Voltage-Min :

110V

Number of Terminations :

2

Terminal Form :

Flat

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Power - Output :

275W

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-CDFP-F2

Published :

2010

Gain :

20.3dB

HTS Code :

8541.29.00.75

Moisture Sensitivity Level (MSL) :

Not Applicable

Base Part Number :

MRF6V12250

Transistor Application :

AMPLIFIER

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Voltage - Rated :

100V

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel