MRF6S20010GNR1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

68V

Transistor Type :

LDMOS

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

Gain :

15.5dB

Published :

2005

Number of Terminations :

2

Package / Case :

TO-270BA

Power - Output :

10W

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Case Connection :

SOURCE

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

JESD-30 Code :

R-PDFM-G2

Factory Lead Time :

10 Weeks

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated :

68V

Qualification Status :

Not Qualified

Operating Temperature (Max) :

225°C

Number of Elements :

1

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Frequency :

2.17GHz

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

HTS Code :

8541.29.00.75

Configuration :

Single

Voltage - Test :

28V

Surface Mount :

yes

Current - Test :

130mA

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MRF6S20010

Transistor Element Material :

SILICON