MRF6S19140HSR3

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Power - Output :

29W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Operating Temperature (Max) :

225°C

Packaging :

Tape and Reel (TR)

Base Part Number :

MRF6S19140

Transistor Type :

LDMOS

Current - Test :

1.15A

Published :

2007

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

DS Breakdown Voltage-Min :

68V

Power Dissipation-Max (Abs) :

530W

Number of Terminations :

2

Voltage - Rated :

68V

Terminal Position :

Dual

Terminal Form :

Flat

HTS Code :

8542.31.00.01

Transistor Application :

AMPLIFIER

Surface Mount :

yes

Frequency :

1.93GHz~1.99GHz

Configuration :

Single

ECCN Code :

EAR99

Gain :

16dB

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

NI-880S

JESD-30 Code :

R-CDFP-F2

Voltage - Test :

28V