MPS6602RLRAG

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Mfr.Part #
MPS6602RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 40V 1A TO92
Stock
8,103
In Stock :
8,103

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Max Power Dissipation :
625mW
Lead Free :
Lead Free
Transistor Application :
AMPLIFIER
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
Current Rating :
1A
HTS Code :
8541.21.00.95
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Gain Bandwidth Product :
100MHz
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 1V
Mounting Type :
Through Hole
Published :
2006
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Max Collector Current :
1A
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
4V
Transition Frequency :
100MHz
Number of Terminations :
3
Terminal Position :
BOTTOM
Qualification Status :
Not Qualified
Collector Emitter Saturation Voltage :
600mV
Voltage - Rated DC :
40V
Current - Collector Cutoff (Max) :
100nA
Pin Count :
3
Peak Reflow Temperature (Cel) :
260
Collector Emitter Voltage (VCEO) :
600mV
Reach Compliance Code :
Unknown
Collector Emitter Breakdown Voltage :
40V
Transistor Element Material :
SILICON
hFE Min :
50
Collector Base Voltage (VCBO) :
45V
Turn On Time-Max (ton) :
55ns
JESD-609 Code :
e1
RoHS Status :
RoHS Compliant
ECCN Code :
EAR99
Number of Elements :
1
Transistor Type :
NPN
Lifecycle Status :
OBSOLETE (Last Updated: 4 days ago)
Datasheets
MPS6602RLRAG
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS6602RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, MPS6602RLRAG pinout, MPS6602RLRAG datasheet PDF, MPS6602RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS6602RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS6602RLRAG


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

MPS6602RLRAG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 1V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

MPS6602RLRAG Features


the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz


MPS6602RLRAG Applications


There are a lot of ON Semiconductor
MPS6602RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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