MPS6602RLRAG
- Mfr.Part #
- MPS6602RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 8,103
- In Stock :
- 8,103
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Current Rating :
- 1A
- HTS Code :
- 8541.21.00.95
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Mounting Type :
- Through Hole
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 600mV
- Voltage - Rated DC :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 600mV
- Reach Compliance Code :
- Unknown
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- hFE Min :
- 50
- Collector Base Voltage (VCBO) :
- 45V
- Turn On Time-Max (ton) :
- 55ns
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Lifecycle Status :
- OBSOLETE (Last Updated: 4 days ago)
- Datasheets
- MPS6602RLRAG

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS6602RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 1V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
MPS6602RLRAG Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6602RLRAG Applications
There are a lot of ON Semiconductor
MPS6602RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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