MPS6602RLRAG
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- Mfr.Part #
- MPS6602RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 8,103
- In Stock ：
- 8,103
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- OBSOLETE (Last Updated: 4 days ago)
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 40V
- HTS Code :
- 8541.21.00.95
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Max Collector Current :
- 1A
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 600mV
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Turn On Time-Max (ton) :
- 55ns
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 600mV
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 45V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Reach Compliance Code :
- Unknown
- hFE Min :
- 50
- Current Rating :
- 1A
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Datasheets
- MPS6602RLRAG
MPS6602RLRAG Documents
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS6602RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 1V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
MPS6602RLRAG Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6602RLRAG Applications
There are a lot of ON Semiconductor
MPS6602RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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