MMRF1306HR5
Or copy the link below:
- Mfr.Part #
- MMRF1306HR5
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-979A
- Datasheet
- Download
- Description
- RF MOSFET LDMOS DL 50V NI-1230
- Stock
- 41
- In Stock ：
- 41
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Voltage - Rated :
- 133V
- Current - Test :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- LDMOS (Dual)
- Frequency :
- 230MHz
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.29.00.75
- Package / Case :
- SOT-979A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Gain :
- 24dB
- Published :
- 2014
- Packaging :
- Tape and Reel (TR)
- Power - Output :
- 1250W
- Factory Lead Time :
- 10 Weeks
- Voltage - Test :
- 50V
- Datasheets
- MMRF1306HR5
MMRF1306HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MMRF1306HR5 Description
High VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications, are intended for use with these highly robust devices. They have unique input and output architectures that enable wide frequency usage between 1.8 and 600 MHz.
MMRF1306HR5 Features
-
Unmatched Input and Output Enables Utilization of a Wide Frequency Range
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The device can be used in a push-pull or single-ended configuration.
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Qualified Up to 50 VDD Operation Maximum
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characterized by a longer power range of 30 to 50 V
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Appropriate Biasing and Suitability for Linear Application
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Improved Class C Operation via Integrated ESD Protection with a Wider Negative Gate-Source Voltage Range
MMRF1306HR5 Applications
Switching applications
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