MMRF1008HSR5
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- Mfr.Part #
- MMRF1008HSR5
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-780S
- Datasheet
- Download
- Description
- FET RF 100V 1.03GHZ NI-780S
- Stock
- 43,930
- In Stock ：
- 43,930
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 2
- Package / Case :
- NI-780S
- Peak Reflow Temperature (Cel) :
- 260
- Gain :
- 20.3dB
- RoHS Status :
- ROHS3 Compliant
- Current - Test :
- 100mA
- Voltage - Rated :
- 100V
- Factory Lead Time :
- 10 Weeks
- Operating Temperature (Max) :
- 225°C
- Power - Output :
- 275W
- Frequency :
- 1.03GHz
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Transistor Type :
- LDMOS
- Voltage - Test :
- 50V
- HTS Code :
- 8541.29.00.75
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- ECCN Code :
- EAR99
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- SOURCE
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 110V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-CDFP-F2
- Published :
- 2013
- Datasheets
- MMRF1008HSR5
MMRF1008HSR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
Features:
- 110V drain-source voltage rating
- Low on-resistance
- Low gate charge
- Low input capacitance
- High speed switching
- High power and current handling capability
Applications: The NXP Semiconductors MMRF1008HSR5 is suitable for a wide range of applications, including power management, motor control, and audio amplifiers. It is also suitable for use in high-frequency switching applications, such as RF power amplifiers, RF switches, and RF mixers.
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