MMBZ33VALT1

Manufacturer :

onsemi

Product Category :

Diode Element Material :

SILICON

Max Reverse Leakage Current :

50μA

JESD-609 Code :

e3

Power Rating :

40W

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

26V

Peak Pulse Power :

40W

Peak Pulse Current :

870mA

Voltage - Rated DC :

33V

ESD Protection :

yes

Breakdown Voltage :

31.35V

Leakage Current :

50nA

Voltage - Clamping (Max) @ Ipp :

46V

Max Surge Current :

870mA

Length :

2.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Surface Mount

Pin Count :

3

Pbfree Code :

yes

Test Current :

1mA

Working Voltage :

26V

Depth :

1.3mm

Contact Plating :

Tin

Type :

Zener

Applications :

GENERAL PURPOSE

Clamping Voltage :

46V

Reverse Standoff Voltage :

26V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tape and Reel (TR)

Number of Elements :

2

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

34.65V

Reverse Breakdown Voltage :

31.35V

Direction :

Unidirectional

Width :

1.4mm

Published :

2007

Power Dissipation :

40W

HTS Code :

8541.10.00.50

Element Configuration :

Common Anode

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Unidirectional Channels :

2

Current Rating :

1A

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Line Protection :

No

Height :

1.01mm

Base Part Number :

MMBZ*A

Termination :

SMD/SMT

Max Power Dissipation :

40W

Surface Mount :

yes