MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

Max Breakdown Voltage :

12.6V

JESD-609 Code :

e3

Published :

2007

Pbfree Code :

yes

Number of Elements :

2

Reverse Standoff Voltage :

8.5V

Terminal Position :

Dual

Number of Pins :

3

Height :

1.01mm

Test Current :

1mA

Depth :

1.3mm

Max Reverse Leakage Current :

200nA

Operating Temperature :

-55°C~150°C TJ

Diode Element Material :

SILICON

Max Output Current :

2.35A

Voltage - Rated DC :

12V

Packaging :

Tape and Reel (TR)

Voltage - Clamping (Max) @ Ipp :

17V

Termination :

SMD/SMT

Surface Mount :

yes

Width :

1.4mm

Leakage Current :

200nA

Factory Lead Time :

4 Weeks

Element Configuration :

Common Anode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Direction :

Unidirectional

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Power Line Protection :

No

Terminal Form :

Gull wing

Max Surge Current :

2.35A

Number of Terminations :

3

Power Rating :

40W

Reverse Breakdown Voltage :

11.4V

Applications :

GENERAL PURPOSE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Clamping Voltage :

17V

Lead Free :

Lead Free

Working Voltage :

8.5V

Type :

Zener

Base Part Number :

MMBZ*A

Peak Pulse Power :

40W

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Number of Bidirectional Channels :

1

Length :

2.9mm

Power Dissipation :

40W

Mounting Type :

Surface Mount

Peak Pulse Current :

2.35A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pin Count :

3

REACH SVHC :

No SVHC

ESD Protection :

yes

Forward Voltage :

900mV

Breakdown Voltage :

11.4V

Operating Supply Voltage :

8.5V