MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

Number of Elements :

2

Clamping Voltage :

17V

Depth :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Voltage :

900mV

JESD-609 Code :

e3

Reverse Breakdown Voltage :

11.4V

Peak Reflow Temperature (Cel) :

260

Leakage Current :

200nA

Voltage - Clamping (Max) @ Ipp :

17V

Operating Temperature :

-55°C~150°C TJ

Max Reverse Leakage Current :

200nA

Peak Pulse Current :

2.35A

Reverse Standoff Voltage :

8.5V

Terminal Form :

Gull wing

Power Line Protection :

No

Element Configuration :

Common Anode

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Power Dissipation :

40W

Time@Peak Reflow Temperature-Max (s) :

40

Applications :

GENERAL PURPOSE

Diode Element Material :

SILICON

Number of Bidirectional Channels :

1

Packaging :

Tape and Reel (TR)

Direction :

Unidirectional

Length :

2.9mm

Type :

Zener

Number of Pins :

3

Max Surge Current :

2.35A

Breakdown Voltage :

11.4V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Pulse Power :

40W

Terminal Position :

Dual

ECCN Code :

EAR99

Published :

2007

Pbfree Code :

yes

Voltage - Rated DC :

12V

Power Rating :

40W

Operating Supply Voltage :

8.5V

Working Voltage :

8.5V

Number of Terminations :

3

Max Output Current :

2.35A

Surface Mount :

yes

Base Part Number :

MMBZ*A

ESD Protection :

yes

Termination :

SMD/SMT

Pin Count :

3

Height :

1.01mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Contact Plating :

Tin

Test Current :

1mA

Width :

1.4mm

Max Breakdown Voltage :

12.6V