MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

Diode Element Material :

SILICON

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Power Line Protection :

No

Lead Free :

Lead Free

Max Surge Current :

2.35A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Peak Pulse Current :

2.35A

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Working Voltage :

8.5V

Reverse Standoff Voltage :

8.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Breakdown Voltage :

11.4V

Terminal Form :

Gull wing

ECCN Code :

EAR99

ESD Protection :

yes

Breakdown Voltage :

11.4V

Operating Supply Voltage :

8.5V

Power Dissipation :

40W

JESD-609 Code :

e3

Termination :

SMD/SMT

Max Breakdown Voltage :

12.6V

Element Configuration :

Common Anode

Leakage Current :

200nA

Forward Voltage :

900mV

Type :

Zener

Max Output Current :

2.35A

Power Rating :

40W

Direction :

Unidirectional

Test Current :

1mA

Length :

2.9mm

Max Reverse Leakage Current :

200nA

Voltage - Clamping (Max) @ Ipp :

17V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Base Part Number :

MMBZ*A

Number of Terminations :

3

Applications :

GENERAL PURPOSE

Width :

1.4mm

Voltage - Rated DC :

12V

Published :

2007

Contact Plating :

Tin

Clamping Voltage :

17V

Number of Elements :

2

Depth :

1.3mm

Number of Bidirectional Channels :

1

Pin Count :

3

Pbfree Code :

yes

Height :

1.01mm

Peak Pulse Power :

40W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

REACH SVHC :

No SVHC