MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

JESD-609 Code :

e3

Number of Bidirectional Channels :

1

Leakage Current :

200nA

Power Rating :

40W

Depth :

1.3mm

Max Breakdown Voltage :

12.6V

Contact Plating :

Tin

Number of Pins :

3

Direction :

Unidirectional

Type :

Zener

Length :

2.9mm

Clamping Voltage :

17V

Published :

2007

Diode Element Material :

SILICON

Power Dissipation :

40W

Base Part Number :

MMBZ*A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Applications :

GENERAL PURPOSE

Voltage - Clamping (Max) @ Ipp :

17V

Max Reverse Leakage Current :

200nA

Reverse Breakdown Voltage :

11.4V

Height :

1.01mm

Reverse Standoff Voltage :

8.5V

Number of Elements :

2

Forward Voltage :

900mV

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Breakdown Voltage :

11.4V

Working Voltage :

8.5V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Peak Pulse Power :

40W

Voltage - Rated DC :

12V

Element Configuration :

Common Anode

Time@Peak Reflow Temperature-Max (s) :

40

Test Current :

1mA

Surface Mount :

yes

ESD Protection :

yes

Width :

1.4mm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Power Line Protection :

No

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Termination :

SMD/SMT

Operating Supply Voltage :

8.5V

REACH SVHC :

No SVHC

Peak Pulse Current :

2.35A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Max Output Current :

2.35A

Pbfree Code :

yes

Max Surge Current :

2.35A

Factory Lead Time :

4 Weeks