MJE181
- Mfr.Part #
- MJE181
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO126
- Stock
- 25,340
- In Stock :
- 25,340
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 1.7V
- Weight :
- 4.535924g
- Base Part Number :
- MJE181
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Height :
- 11.0998mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 2.9972mm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Power Dissipation :
- 12.5W
- Gain Bandwidth Product :
- 50MHz
- Length :
- 7.7978mm
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2000
- Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 7V
- JESD-609 Code :
- e3
- Max Collector Current :
- 3A
- Current Rating :
- 3A
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Number of Pins :
- 3
- Transition Frequency :
- 50MHz
- hFE Min :
- 50
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- MJE181
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NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE181G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 1.7V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
MJE181G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE181G Applications
There are a lot of ON Semiconductor
MJE181G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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