MJE181

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Mfr.Part #
MJE181
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 60V 3A TO126
Stock
25,340
In Stock :
25,340

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
40
ECCN Code :
EAR99
Packaging :
Bulk
Collector Emitter Saturation Voltage :
1.7V
Weight :
4.535924g
Base Part Number :
MJE181
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Height :
11.0998mm
Current - Collector Cutoff (Max) :
100nA ICBO
Width :
2.9972mm
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Pin Count :
3
Power Dissipation :
12.5W
Gain Bandwidth Product :
50MHz
Length :
7.7978mm
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
60V
Published :
2000
Frequency :
50MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
60V
Package / Case :
TO-225AA, TO-126-3
Transistor Application :
SWITCHING
Max Power Dissipation :
1.5W
Emitter Base Voltage (VEBO) :
7V
JESD-609 Code :
e3
Max Collector Current :
3A
Current Rating :
3A
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
60V
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 600mA, 3A
Number of Pins :
3
Transition Frequency :
50MHz
hFE Min :
50
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 100mA 1V
Factory Lead Time :
4 Weeks
Number of Elements :
1
Surface Mount :
No
Collector Base Voltage (VCBO) :
80V
REACH SVHC :
No SVHC
Operating Temperature :
-65°C~150°C TJ
Datasheets
MJE181
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE181 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJE181, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, MJE181 pinout, MJE181 datasheet PDF, MJE181 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE181 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE181


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

MJE181G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 1.7V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

MJE181G Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz


MJE181G Applications


There are a lot of ON Semiconductor
MJE181G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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