MJE18006
- Mfr.Part #
- MJE18006
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 6A TO220
- Stock
- 1,525
- In Stock :
- 1,525
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 6A
- Series :
- SWITCHMODE™
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100μA
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 10 hours ago)
- Max Collector Current :
- 6A
- Pin Count :
- 3
- Transition Frequency :
- 14MHz
- Mounting Type :
- Through Hole
- Current Rating :
- 8A
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 450V
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 1kV
- Max Power Dissipation :
- 100W
- Lead Free :
- Contains Lead
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 3A 1V
- Collector Emitter Saturation Voltage :
- 250mV
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 700mV
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 600mA, 3A
- Gain Bandwidth Product :
- 14MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 240
- hFE Min :
- 5
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Published :
- 2006
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 450V
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Datasheets
- MJE18006

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE18006 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 6 @ 3A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 600mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 14MHz.During maximum operation, collector current can be as low as 6A volts.
MJE18006 Features
the DC current gain for this device is 6 @ 3A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 8A
a transition frequency of 14MHz
MJE18006 Applications
There are a lot of ON Semiconductor
MJE18006 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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