MJE18006
- Mfr.Part #
- MJE18006
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 6A TO220
- Stock
- 1,525
- In Stock :
- 1,525
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 450V
- Collector Emitter Saturation Voltage :
- 250mV
- Transition Frequency :
- 14MHz
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Series :
- SWITCHMODE™
- Current - Collector (Ic) (Max) :
- 6A
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Current Rating :
- 8A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 10 hours ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 3
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 600mA, 3A
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Gain Bandwidth Product :
- 14MHz
- Max Collector Current :
- 6A
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 100W
- JEDEC-95 Code :
- TO-220AB
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 700mV
- Current - Collector Cutoff (Max) :
- 100μA
- Mounting Type :
- Through Hole
- hFE Min :
- 5
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 450V
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 1kV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 3A 1V
- Datasheets
- MJE18006
MJE18006 Documents

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE18006 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 6 @ 3A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 600mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 14MHz.During maximum operation, collector current can be as low as 6A volts.
MJE18006 Features
the DC current gain for this device is 6 @ 3A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 8A
a transition frequency of 14MHz
MJE18006 Applications
There are a lot of ON Semiconductor
MJE18006 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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