MJE172
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- Mfr.Part #
- MJE172
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Width :
- 3mm
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Published :
- 2006
- Lead Free :
- Lead Free
- Power Dissipation :
- 12.5W
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MJE172
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Weight :
- 4.535924g
- Frequency :
- 50MHz
- hFE Min :
- 50
- Height :
- 11.1mm
- Packaging :
- Bulk
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 7.8mm
- Voltage - Rated DC :
- -80V
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 1.5W
- Collector Emitter Saturation Voltage :
- 1.7V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 6 Weeks
- ECCN Code :
- EAR99
- Transition Frequency :
- 50MHz
- Datasheets
- MJE172
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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