MJE172
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- Mfr.Part #
- MJE172
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.7V
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 3A
- REACH SVHC :
- No SVHC
- Height :
- 11.1mm
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Surface Mount :
- No
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Frequency :
- 50MHz
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 3A
- Max Power Dissipation :
- 1.5W
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- -80V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- hFE Min :
- 50
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 12.5W
- Length :
- 7.8mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-225AA, TO-126-3
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Base Part Number :
- MJE172
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 50MHz
- Datasheets
- MJE172
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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