MJE172
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- Mfr.Part #
- MJE172
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A SOT32-3
- Stock
- 34,428
- In Stock ：
- 34,428
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Max Power Dissipation :
- 1.5W
- Element Configuration :
- Single
- Height :
- 11.1mm
- Contact Plating :
- Tin
- Base Part Number :
- MJE172
- Voltage - Rated DC :
- -80V
- Collector Base Voltage (VCBO) :
- 100V
- hFE Min :
- 50
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Width :
- 3mm
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 7.8mm
- Frequency :
- 50MHz
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Surface Mount :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Max Collector Current :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Saturation Voltage :
- 1.7V
- Pin Count :
- 3
- Current Rating :
- 3A
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 12.5W
- Transition Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 50MHz
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 4.535924g
- Datasheets
- MJE172
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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