MJE170STU
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- Mfr.Part #
- MJE170STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A TO126-3
- Stock
- 125
- In Stock ：
- 125
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-225AA, TO-126-3
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 40V
- Emitter Base Voltage (VEBO) :
- -7V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Base Part Number :
- MJE170
- Frequency :
- 50MHz
- Weight :
- 761mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -60V
- Published :
- 2001
- Max Collector Current :
- 3A
- Voltage - Rated DC :
- -40V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -1.7V
- Max Power Dissipation :
- 1.5W
- hFE Min :
- 50
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 50MHz
- Current Rating :
- -3A
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1.5W
- Gain Bandwidth Product :
- 50MHz
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MJE170STU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
MJE170STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.7V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
MJE170STU Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 50MHz
MJE170STU Applications
There are a lot of ON Semiconductor
MJE170STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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