MJE170G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

40V

Frequency :

50MHz

Published :

2000

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Length :

6.35mm

Power Dissipation :

12.5W

Pin Count :

3

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Number of Elements :

1

Width :

6.35mm

Radiation Hardening :

No

Element Configuration :

Single

Power - Max :

1.5W

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Factory Lead Time :

2 Weeks

Number of Pins :

3

Current Rating :

2A

Collector Base Voltage (VCBO) :

60V

Transition Frequency :

50MHz

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

50

Polarity/Channel Type :

PNP

Max Collector Current :

3A

Operating Temperature :

-65°C~150°C TJ

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Base Part Number :

MJE170

Height :

6.35mm

Pbfree Code :

yes

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Max Power Dissipation :

1.5W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

4.535924g

Voltage - Rated DC :

-40V

Collector Emitter Saturation Voltage :

1.7V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-225AA, TO-126-3

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gain Bandwidth Product :

50MHz

Transistor Type :

PNP

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

40V

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

7V

Packaging :

Bulk