MJE15032G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

10

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

250V

Current - Collector Cutoff (Max) :

10μA ICBO

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

250V

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-220-3

Collector Base Voltage (VCBO) :

250V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Pin Count :

3

Collector Emitter Breakdown Voltage :

250V

Element Configuration :

Single

Transition Frequency :

30MHz

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation :

2W

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Transistor Type :

NPN

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

7 Weeks

Number of Elements :

1

Gain Bandwidth Product :

30MHz

Polarity/Channel Type :

NPN

Current Rating :

8A

Frequency :

30MHz

Length :

10.2616mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

3

Width :

4.826mm

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

500mV

Packaging :

Tube

Mounting Type :

Through Hole

Height :

15.748mm

Weight :

4.535924g

Max Collector Current :

8A

Lead Free :

Lead Free

Published :

2004

Surface Mount :

No

Number of Terminations :

3