MJE15030

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Weight :

4.535924g

Max Power Dissipation :

50W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Transistor Application :

AMPLIFIER

hFE Min :

40

Current Rating :

8A

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Voltage (VCEO) :

150V

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Length :

10.2616mm

Published :

2003

JEDEC-95 Code :

TO-220AB

Case Connection :

COLLECTOR

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 2V

Peak Reflow Temperature (Cel) :

260

Frequency :

30MHz

Collector Base Voltage (VCBO) :

150V

Width :

4.826mm

Number of Pins :

3

Element Configuration :

Single

Voltage - Rated DC :

150V

Pin Count :

3

Gain Bandwidth Product :

30MHz

Power Dissipation :

2W

Package / Case :

TO-220-3

Height :

15.748mm

Collector Emitter Breakdown Voltage :

150V

Surface Mount :

No

Polarity/Channel Type :

NPN

Transition Frequency :

30MHz

Number of Terminations :

3

JESD-609 Code :

e3

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tube

Operating Temperature :

-65°C~150°C TJ

Max Collector Current :

8A

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Collector Emitter Saturation Voltage :

500mV

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Lead Free :

Lead Free