MHT1008NT1

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Mfr.Part #
MHT1008NT1
Manufacturer
Freescale Semiconductor
Package / Case
PLD-1.5W
Datasheet
Download
Description
RF POWER FIELD-EFFECT TRANSISTOR
Stock
800
In Stock :
800

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Manufacturer :
Freescale Semiconductor
Product Category :
Transistors - FETs, MOSFETs - RF
Factory Lead Time :
10 Weeks
RoHS Status :
ROHS3 Compliant
Gain :
18.6dB
Packaging :
Tape and Reel (TR)
Package / Case :
PLD-1.5W
Transistor Type :
LDMOS
Voltage - Rated :
28V
Published :
2009
Frequency :
2.4GHz~2.5GHz
Power - Output :
12.5W
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Datasheets
MHT1008NT1
Introducing Transistors - FETs, MOSFETs - RF Freescale Semiconductor MHT1008NT1 from Chip IC,where excellence meets affordability. This product stands out with its Gain:18.6dB, Package / Case:PLD-1.5W, MHT1008NT1 pinout, MHT1008NT1 datasheet PDF, MHT1008NT1 amp .Beyond Transistors - FETs, MOSFETs - RF Freescale Semiconductor MHT1008NT1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.



MHT1008NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

MHT1008NT1 Description

 

MHT1008NT1 transistor is an N-channel MOS field-effect RF power transistor. The special low thermal resistance packaging makes MHT1008NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MHT1008NT1 has the common source configuration.

 

 

MHT1008NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

MHT1008NT1 Applications

 

ISM applications

DC large signal applications


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