MG200Q2YS60A

Manufacturer :

Powerex, Inc.

Product Category :

Transistors - IGBTs - Modules

Transistor Application :

POWER CONTROL

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 200A

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Operating Temperature :

-20°C~150°C TJ

Configuration :

Half Bridge

Current - Collector Cutoff (Max) :

1mA

Collector Emitter Voltage (VCEO) :

2.8V

Max Collector Current :

200A

Max Power Dissipation :

2kW

Number of Elements :

2

Power - Max :

2000W

Case Connection :

Isolated

NTC Thermistor :

No

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Input Capacitance (Cies) @ Vce :

15nF @ 10V

Pin Count :

11

Input :

Standard

Number of Terminations :

11

Input Capacitance :

15nF

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-XUFM-X11

Collector Emitter Breakdown Voltage :

1.2kV

Series :

IGBTMOD™

Mount :

Chassis Mount

Terminal Form :

UNSPECIFIED

Package / Case :

Module

Voltage - Collector Emitter Breakdown (Max) :

1200V