LP0701N3-G

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Mfr.Part #
LP0701N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 16.5V 500MA TO92
Stock
912
In Stock :
912

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Fall Time (Typ) :
30 ns
Package Shape :
Round
Drive Voltage (Max Rds On,Min Rds On) :
2V 5V
Drain-Source On-Volt :
16.5(V)
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current Id :
500
Rad Hardened :
No
Mounting Type :
Through Hole
Number of Channels :
1
Length :
5.21mm
Drain-source On Resistance-Max :
1.5 Ω
Qualification Status :
Not Qualified
Pin Count :
3
Package Type :
TO-92
Element Configuration :
Single
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Vgs (Max) :
±10V
Operating Mode :
ENHANCEMENT MODE
Height :
5.33mm
Gate to Source Voltage (Vgs) :
10V
Terminal Position :
BOTTOM
Minimum Operating Temperature :
- 55 C
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Channel Mode :
Enhancement
FET Type :
P-Channel
Transistor Polarity :
P-Channel
Transistor Type :
1 P-Channel
Operating Temperature :
-55°C~150°C TJ
Mounting :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Rise Time :
20ns
Vgs(th) (Max) @ Id :
1V @ 1mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2013
ECCN Code :
EAR99
Configuration :
Single
Peak Reflow Temperature (Cel) :
Not Applicable
Subcategory :
MOSFETs
Number of Terminals :
3
Terminal Finish :
Matte Tin (Sn)
Polarity :
P
Continuous Drain Current (ID) :
500mA
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 300mA, 5V
Number of Pins :
3
Packaging :
Bulk
Operating Temperature Classification :
Military
Number of Terminations :
3
Feedback Cap-Max (Crss) :
60 pF
Drain to Source Voltage (Vdss) :
16.5V
Operating Temp Range :
-55C to 150C
RoHS :
Details
DS Breakdown Voltage-Min :
16.5 V
Drain Current-Max (Abs) (ID) :
0.5A
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Radiation Hardening :
No
Supplier Device Package :
TO-92
Type :
Power MOSFET
Turn On Delay Time :
20 ns
Brand :
Microchip Technology / Atmel
Mounting Style :
Through Hole
Continuous Drain Current :
0.5(A)
Manufacturer :
Microchip
Turn-Off Delay Time :
30 ns
Product Type :
MOSFET
JEDEC-95 Code :
TO-92
Gate-Source Voltage (Max) :
±10(V)
Transistor Element Material :
SILICON
Number of Elements :
1
Weight :
453.59237mg
Power Dissipation (Max) :
1W (Tc)
JESD-30 Code :
O-PBCY-T3
Channel Type :
P
Base Product Number :
LP0701N3
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 15V
Width :
4.19mm
Additional Feature :
LOW THRESHOLD
Power Dissipation :
1W
Surface Mount :
No
Polarity/Channel Type :
P-Channel
Drain to Source Breakdown Voltage :
-16.5V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Package :
Bag
Product Category :
MOSFET
Factory Lead Time :
17 Weeks
Series :
--
Power Dissipation-Max :
1W Tc
Datasheets
LP0701N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LP0701N3-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Type:Power MOSFET, Package / Case:TO-226-3, TO-92-3 (TO-226AA), LP0701N3-G pinout, LP0701N3-G datasheet PDF, LP0701N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LP0701N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LP0701N3-G


P-Channel Bulk 1.5 Ω @ 300mA, 5V ±10V 250pF @ 15V 16.5V TO-226-3, TO-92-3 (TO-226AA)

LP0701N3-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain-source breakdown voltage is -16.5V and VGS=-16.5V, so the drain-source breakdown voltage is -16.5V in this case.A device can conduct a maximum continuous current of [0.5A] according to its drain current.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 16.5 V to maintain normal operation.To operate this transistor, you will need a 16.5V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2V 5V).

LP0701N3-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of -16.5V voltage
the turn-off delay time is 30 ns
a 16.5V drain to source voltage (Vdss)


LP0701N3-G Applications


There are a lot of Microchip Technology
LP0701N3-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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