LP0701N3-G
- Mfr.Part #
- LP0701N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 16.5V 500MA TO92
- Stock
- 912
- In Stock :
- 912
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Fall Time (Typ) :
- 30 ns
- Package Shape :
- Round
- Drive Voltage (Max Rds On,Min Rds On) :
- 2V 5V
- Drain-Source On-Volt :
- 16.5(V)
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current Id :
- 500
- Rad Hardened :
- No
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Length :
- 5.21mm
- Drain-source On Resistance-Max :
- 1.5 Ω
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Package Type :
- TO-92
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±10V
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 5.33mm
- Gate to Source Voltage (Vgs) :
- 10V
- Terminal Position :
- BOTTOM
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Channel Mode :
- Enhancement
- FET Type :
- P-Channel
- Transistor Polarity :
- P-Channel
- Transistor Type :
- 1 P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mounting :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Rise Time :
- 20ns
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2013
- ECCN Code :
- EAR99
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Subcategory :
- MOSFETs
- Number of Terminals :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Polarity :
- P
- Continuous Drain Current (ID) :
- 500mA
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 300mA, 5V
- Number of Pins :
- 3
- Packaging :
- Bulk
- Operating Temperature Classification :
- Military
- Number of Terminations :
- 3
- Feedback Cap-Max (Crss) :
- 60 pF
- Drain to Source Voltage (Vdss) :
- 16.5V
- Operating Temp Range :
- -55C to 150C
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 16.5 V
- Drain Current-Max (Abs) (ID) :
- 0.5A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Supplier Device Package :
- TO-92
- Type :
- Power MOSFET
- Turn On Delay Time :
- 20 ns
- Brand :
- Microchip Technology / Atmel
- Mounting Style :
- Through Hole
- Continuous Drain Current :
- 0.5(A)
- Manufacturer :
- Microchip
- Turn-Off Delay Time :
- 30 ns
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-92
- Gate-Source Voltage (Max) :
- ±10(V)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Weight :
- 453.59237mg
- Power Dissipation (Max) :
- 1W (Tc)
- JESD-30 Code :
- O-PBCY-T3
- Channel Type :
- P
- Base Product Number :
- LP0701N3
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 15V
- Width :
- 4.19mm
- Additional Feature :
- LOW THRESHOLD
- Power Dissipation :
- 1W
- Surface Mount :
- No
- Polarity/Channel Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -16.5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Package :
- Bag
- Product Category :
- MOSFET
- Factory Lead Time :
- 17 Weeks
- Series :
- --
- Power Dissipation-Max :
- 1W Tc
- Datasheets
- LP0701N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 1.5 Ω @ 300mA, 5V ±10V 250pF @ 15V 16.5V TO-226-3, TO-92-3 (TO-226AA)
LP0701N3-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain-source breakdown voltage is -16.5V and VGS=-16.5V, so the drain-source breakdown voltage is -16.5V in this case.A device can conduct a maximum continuous current of [0.5A] according to its drain current.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 16.5 V to maintain normal operation.To operate this transistor, you will need a 16.5V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2V 5V).
LP0701N3-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of -16.5V voltage
the turn-off delay time is 30 ns
a 16.5V drain to source voltage (Vdss)
LP0701N3-G Applications
There are a lot of Microchip Technology
LP0701N3-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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