LND250K1-G

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Mfr.Part #
LND250K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 500V 13MA SOT23
Stock
2,511
In Stock :
2,511

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Continuous Drain Current (ID) :
13mA
Published :
2014
Number of Terminals :
3
Qualification Status :
Not Qualified
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
Subcategory :
MOSFETs
Current - Continuous Drain (Id) @ 25°C :
13mA Tj
JEDEC-95 Code :
TO-236AB
Weight :
1.437803g
Width :
1.3mm
Terminal Form :
Gull wing
Drain to Source Resistance :
1 kΩ
Product Status :
Active
Vgs (Max) :
±20V
Turn-On Delay Time :
90 ns
Drain to Source Breakdown Voltage :
500V
Terminal Position :
Dual
RoHS :
Details
Manufacturer :
Microchip
Power Dissipation :
360mW
HTS Code :
8541.21.00.95
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Product :
MOSFET Small Signal
Supplier Device Package :
SOT-23 (TO-236AB)
Gate to Source Voltage (Vgs) :
20V
Brand :
Microchip Technology / Atmel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Product Type :
MOSFET
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
450ns
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
500V
Power Dissipation-Max :
360mW Ta
Transistor Polarity :
N-Channel
Packaging :
Tape and Reel (TR)
Additional Feature :
HIGH INPUT IMPEDANCE
Operating Mode :
Depletion Mode
ECCN Code :
EAR99
Feedback Cap-Max (Crss) :
1 pF
Vgs(th) (Max) @ Id :
--
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) :
360mW (Ta)
Turn-Off Delay Time :
100 ns
Terminal Finish :
Matte Tin (Sn) - annealed
Number of Pins :
3
Continuous Drain Current Id :
13
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Channel Mode :
Depletion
Height :
950μm
Drain-source On Resistance-Max :
1000 Ω
Min Operating Temperature :
-55 °C
Channel Type :
N
Factory Lead Time :
6 Weeks
Turn On Delay Time :
90 ns
FET Feature :
Depletion Mode
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Lifecycle Status :
Production (Last Updated: 2 years ago)
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Surface Mount :
yes
Base Product Number :
LND250
Type :
FET
JESD-609 Code :
e3
Series :
--
Package Shape :
RECTANGULAR
Mounting Style :
SMD/SMT
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PDSO-G3
Input Capacitance :
10 pF
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
0V
Transistor Application :
SWITCHING
Number of Terminations :
3
DS Breakdown Voltage-Min :
500 V
Configuration :
Single
Max Operating Temperature :
150 °C
Number of Channels :
1
Max Power Dissipation :
360 mW
Length :
2.9mm
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Rds On Max :
1 kΩ
Mounting Type :
Surface Mount
Fall Time (Typ) :
450 ns
Datasheets
LND250K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Type:FET, Number of Terminations:3, Number of Channels:1, Mounting Type:Surface Mount, LND250K1-G pinout, LND250K1-G datasheet PDF, LND250K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND250K1-G


N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3

LND250K1-G Overview


The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

LND250K1-G Features


a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)


LND250K1-G Applications


There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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