LND250K1-G

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Mfr.Part #
LND250K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 500V 13MA SOT23
Stock
2,511
In Stock :
2,511

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Subcategory :
MOSFETs
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Factory Lead Time :
6 Weeks
Rise Time :
450ns
Fall Time (Typ) :
450 ns
Reach Compliance Code :
Compliant
JESD-609 Code :
e3
Maximum Operating Temperature :
+ 150 C
Height :
950μm
Product Category :
MOSFET
Operating Mode :
Depletion Mode
Published :
2014
FET Feature :
Depletion Mode
Input Capacitance :
10 pF
Brand :
Microchip Technology / Atmel
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
JESD-30 Code :
R-PDSO-G3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
SOT-23 (TO-236AB)
Product :
MOSFET Small Signal
Number of Channels :
1
Continuous Drain Current (ID) :
13mA
Power Dissipation (Max) :
360mW (Ta)
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
0V
Drain to Source Voltage (Vdss) :
500V
DS Breakdown Voltage-Min :
500 V
Package Shape :
RECTANGULAR
Product Type :
MOSFET
HTS Code :
8541.21.00.95
Series :
--
Turn-Off Delay Time :
100 ns
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Length :
2.9mm
Max Power Dissipation :
360 mW
Weight :
1.437803g
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
--
Product Status :
Active
Channel Type :
N
JEDEC-95 Code :
TO-236AB
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn) - annealed
Channel Mode :
Depletion
Mount :
Surface Mount
Transistor Polarity :
N-Channel
Mounting Type :
Surface Mount
Turn On Delay Time :
90 ns
Terminal Form :
Gull wing
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
360mW
RoHS :
Details
Drain to Source Breakdown Voltage :
500V
Drain-source On Resistance-Max :
1000 Ω
Minimum Operating Temperature :
- 55 C
Min Operating Temperature :
-55 °C
Number of Pins :
3
Transistor Type :
1 N-Channel
Feedback Cap-Max (Crss) :
1 pF
Current - Continuous Drain (Id) @ 25°C :
13mA Tj
Drain to Source Resistance :
1 kΩ
Additional Feature :
HIGH INPUT IMPEDANCE
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Number of Elements :
1
Lifecycle Status :
Production (Last Updated: 2 years ago)
Manufacturer :
Microchip
Mounting Style :
SMD/SMT
Terminal Position :
Dual
Turn-On Delay Time :
90 ns
FET Type :
N-Channel
Base Product Number :
LND250
Type :
FET
Power Dissipation-Max :
360mW Ta
Continuous Drain Current Id :
13
Package / Case :
TO-236-3, SC-59, SOT-23-3
Max Operating Temperature :
150 °C
Width :
1.3mm
Surface Mount :
yes
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Rds On Max :
1 kΩ
Datasheets
LND250K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:3, Type:FET, Package / Case:TO-236-3, SC-59, SOT-23-3, LND250K1-G pinout, LND250K1-G datasheet PDF, LND250K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND250K1-G


N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3

LND250K1-G Overview


The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

LND250K1-G Features


a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)


LND250K1-G Applications


There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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