LND250K1-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500 V

Number of Terminals :

3

Channel Mode :

Depletion

Manufacturer :

Microchip

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 25V

Transistor Application :

SWITCHING

Power Dissipation-Max :

360mW Ta

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

13mA Tj

Product Status :

Active

Qualification Status :

Not Qualified

Max Operating Temperature :

150 °C

JESD-30 Code :

R-PDSO-G3

Max Power Dissipation :

360 mW

Weight :

1.437803g

Terminal Form :

Gull wing

FET Feature :

Depletion Mode

Series :

--

Drive Voltage (Max Rds On,Min Rds On) :

0V

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

360mW

Feedback Cap-Max (Crss) :

1 pF

Additional Feature :

HIGH INPUT IMPEDANCE

Package Shape :

RECTANGULAR

Drain to Source Resistance :

1 kΩ

Type :

FET

Brand :

Microchip Technology / Atmel

Rds On (Max) @ Id, Vgs :

1000 Ω @ 500μA, 0V

Operating Mode :

Depletion Mode

Packaging :

Tape and Reel (TR)

Minimum Operating Temperature :

- 55 C

Continuous Drain Current (ID) :

13mA

Transistor Type :

1 N-Channel

Mount :

Surface Mount

Continuous Drain Current Id :

13

Polarity/Channel Type :

N-Channel

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Product Category :

MOSFET

Factory Lead Time :

6 Weeks

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

Production (Last Updated: 2 years ago)

Drain to Source Breakdown Voltage :

500V

Drain to Source Voltage (Vdss) :

500V

FET Type :

N-Channel

Power Dissipation (Max) :

360mW (Ta)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Details

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Maximum Operating Temperature :

+ 150 C

HTS Code :

8541.21.00.95

Number of Elements :

1

Product :

MOSFET Small Signal

Supplier Device Package :

SOT-23 (TO-236AB)

JESD-609 Code :

e3

ECCN Code :

EAR99

Rise Time :

450ns

Length :

2.9mm

JEDEC-95 Code :

TO-236AB

Vgs (Max) :

±20V

Terminal Position :

Dual

Element Configuration :

Single

Base Product Number :

LND250

Input Capacitance :

10 pF

Number of Pins :

3

Channel Type :

N

Published :

2014

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Terminations :

3

Fall Time (Typ) :

450 ns

Mounting Style :

SMD/SMT

Turn-On Delay Time :

90 ns

Configuration :

Single

Product Type :

MOSFET

Min Operating Temperature :

-55 °C

Turn On Delay Time :

90 ns

Turn-Off Delay Time :

100 ns

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain-source On Resistance-Max :

1000 Ω

Height :

950μm

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

--

Subcategory :

MOSFETs

Rds On Max :

1 kΩ