LND250K1-G

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Mfr.Part #
LND250K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 500V 13MA SOT23
Stock
2,511
In Stock :
2,511

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
--
Drain-source On Resistance-Max :
1000 Ω
Turn On Delay Time :
90 ns
Transistor Type :
1 N-Channel
Product :
MOSFET Small Signal
Channel Type :
N
Input Capacitance :
10 pF
Manufacturer :
Microchip
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
--
Transistor Element Material :
SILICON
Drain to Source Resistance :
1 kΩ
Max Power Dissipation :
360 mW
Max Operating Temperature :
150 °C
Mount :
Surface Mount
Product Type :
MOSFET
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Supplier Device Package :
SOT-23 (TO-236AB)
Turn-On Delay Time :
90 ns
Power Dissipation-Max :
360mW Ta
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-236AB
Drive Voltage (Max Rds On,Min Rds On) :
0V
Number of Terminations :
3
Mounting Style :
SMD/SMT
Width :
1.3mm
Packaging :
Tape and Reel (TR)
Height :
950μm
Subcategory :
MOSFETs
Polarity/Channel Type :
N-Channel
Rds On Max :
1 kΩ
Product Category :
MOSFET
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
100 ns
Published :
2014
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
HTS Code :
8541.21.00.95
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
13mA
Weight :
1.437803g
Brand :
Microchip Technology / Atmel
JESD-30 Code :
R-PDSO-G3
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Number of Terminals :
3
Power Dissipation (Max) :
360mW (Ta)
Channel Mode :
Depletion
Configuration :
Single
DS Breakdown Voltage-Min :
500 V
Number of Channels :
1
Surface Mount :
yes
Feedback Cap-Max (Crss) :
1 pF
Qualification Status :
Not Qualified
Operating Mode :
Depletion Mode
Continuous Drain Current Id :
13
RoHS :
Details
Rise Time :
450ns
ECCN Code :
EAR99
Number of Pins :
3
Lifecycle Status :
Production (Last Updated: 2 years ago)
Product Status :
Active
Base Product Number :
LND250
Factory Lead Time :
6 Weeks
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55 °C
Element Configuration :
Single
Type :
FET
Maximum Operating Temperature :
+ 150 C
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
13mA Tj
Package / Case :
TO-236-3, SC-59, SOT-23-3
Terminal Form :
Gull wing
Reach Compliance Code :
Compliant
Power Dissipation :
360mW
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
2.9mm
Terminal Position :
Dual
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn) - annealed
Fall Time (Typ) :
450 ns
Additional Feature :
HIGH INPUT IMPEDANCE
FET Feature :
Depletion Mode
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Datasheets
LND250K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Number of Channels:1, Number of Pins:3, Type:FET, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, LND250K1-G pinout, LND250K1-G datasheet PDF, LND250K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND250K1-G


N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3

LND250K1-G Overview


The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

LND250K1-G Features


a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)


LND250K1-G Applications


There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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