LND250K1-G

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Mfr.Part #
LND250K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 500V 13MA SOT23
Stock
2,511
In Stock :
2,511

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Subcategory :
MOSFETs
Rds On Max :
1 kΩ
Minimum Operating Temperature :
- 55 C
Published :
2014
Terminal Finish :
Matte Tin (Sn) - annealed
Qualification Status :
Not Qualified
Turn On Delay Time :
90 ns
ECCN Code :
EAR99
Maximum Operating Temperature :
+ 150 C
Height :
950μm
Packaging :
Tape and Reel (TR)
Type :
FET
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-236-3, SC-59, SOT-23-3
Continuous Drain Current (ID) :
13mA
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
--
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Terminal Form :
Gull wing
Number of Elements :
1
Drain-source On Resistance-Max :
1000 Ω
Package Shape :
RECTANGULAR
Number of Pins :
3
Configuration :
Single
Turn-On Delay Time :
90 ns
Lifecycle Status :
Production (Last Updated: 2 years ago)
RoHS :
Details
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Mounting Style :
SMD/SMT
Channel Mode :
Depletion
Turn-Off Delay Time :
100 ns
Drain to Source Voltage (Vdss) :
500V
Length :
2.9mm
Transistor Application :
SWITCHING
Supplier Device Package :
SOT-23 (TO-236AB)
Number of Channels :
1
Max Power Dissipation :
360 mW
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55 °C
Power Dissipation-Max :
360mW Ta
Drain to Source Breakdown Voltage :
500V
HTS Code :
8541.21.00.95
Product Category :
MOSFET
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
13mA Tj
Element Configuration :
Single
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
Fall Time (Typ) :
450 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
360mW
Continuous Drain Current Id :
13
Max Operating Temperature :
150 °C
Manufacturer :
Microchip
Number of Terminals :
3
Input Capacitance :
10 pF
JEDEC-95 Code :
TO-236AB
Product :
MOSFET Small Signal
Drive Voltage (Max Rds On,Min Rds On) :
0V
Transistor Polarity :
N-Channel
Width :
1.3mm
Mounting Type :
Surface Mount
Series :
--
Polarity/Channel Type :
N-Channel
Feedback Cap-Max (Crss) :
1 pF
Brand :
Microchip Technology / Atmel
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Dual
Additional Feature :
HIGH INPUT IMPEDANCE
Operating Mode :
Depletion Mode
JESD-30 Code :
R-PDSO-G3
FET Feature :
Depletion Mode
FET Type :
N-Channel
Power Dissipation (Max) :
360mW (Ta)
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Transistor Type :
1 N-Channel
Rise Time :
450ns
Weight :
1.437803g
Factory Lead Time :
6 Weeks
Base Product Number :
LND250
Channel Type :
N
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
500 V
Drain to Source Resistance :
1 kΩ
Surface Mount :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
LND250K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G from Chip IC,where excellence meets affordability. This product stands out with its Type:FET, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Channels:1, Mounting Type:Surface Mount, LND250K1-G pinout, LND250K1-G datasheet PDF, LND250K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND250K1-G


N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3

LND250K1-G Overview


The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

LND250K1-G Features


a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)


LND250K1-G Applications


There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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