LND250K1-G

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Mfr.Part #
LND250K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 500V 13MA SOT23
Stock
2,511
In Stock :
2,511

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
Depletion Mode
HTS Code :
8541.21.00.95
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Terminal Position :
Dual
Type :
FET
RoHS :
Details
Series :
--
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
100 ns
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
0V
Number of Terminations :
3
Mounting Style :
SMD/SMT
Element Configuration :
Single
Turn-On Delay Time :
90 ns
Polarity/Channel Type :
N-Channel
Packaging :
Tape and Reel (TR)
Additional Feature :
HIGH INPUT IMPEDANCE
Fall Time (Typ) :
450 ns
Drain to Source Resistance :
1 kΩ
Gate to Source Voltage (Vgs) :
20V
JEDEC-95 Code :
TO-236AB
Factory Lead Time :
6 Weeks
Published :
2014
Power Dissipation (Max) :
360mW (Ta)
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Power Dissipation :
360mW
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
13mA Tj
Channel Mode :
Depletion
Product :
MOSFET Small Signal
Drain to Source Breakdown Voltage :
500V
Feedback Cap-Max (Crss) :
1 pF
Product Type :
MOSFET
Width :
1.3mm
Subcategory :
MOSFETs
Turn On Delay Time :
90 ns
Min Operating Temperature :
-55 °C
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
13mA
Package Shape :
RECTANGULAR
Lifecycle Status :
Production (Last Updated: 2 years ago)
Vgs(th) (Max) @ Id :
--
Length :
2.9mm
Power Dissipation-Max :
360mW Ta
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
1000 Ω
Terminal Form :
Gull wing
Mount :
Surface Mount
Product Category :
MOSFET
Transistor Type :
1 N-Channel
FET Type :
N-Channel
Max Power Dissipation :
360 mW
Max Operating Temperature :
150 °C
Continuous Drain Current Id :
13
Terminal Finish :
Matte Tin (Sn) - annealed
Manufacturer :
Microchip
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On Max :
1 kΩ
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Number of Channels :
1
Number of Terminals :
3
Supplier Device Package :
SOT-23 (TO-236AB)
Number of Elements :
1
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e3
Brand :
Microchip Technology / Atmel
Package / Case :
TO-236-3, SC-59, SOT-23-3
Product Status :
Active
Drain to Source Voltage (Vdss) :
500V
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
Rise Time :
450ns
Input Capacitance :
10 pF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
LND250
Reach Compliance Code :
Compliant
Number of Pins :
3
JESD-30 Code :
R-PDSO-G3
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Transistor Application :
SWITCHING
Height :
950μm
DS Breakdown Voltage-Min :
500 V
Channel Type :
N
FET Feature :
Depletion Mode
Mounting Type :
Surface Mount
Weight :
1.437803g
Datasheets
LND250K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G from Chip IC,where excellence meets affordability. This product stands out with its Type:FET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Mounting Type:Surface Mount, LND250K1-G pinout, LND250K1-G datasheet PDF, LND250K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND250K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND250K1-G


N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3

LND250K1-G Overview


The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

LND250K1-G Features


a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)


LND250K1-G Applications


There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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