LND250K1-G
- Mfr.Part #
- LND250K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 13MA SOT23
- Stock
- 2,511
- In Stock :
- 2,511
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- Depletion Mode
- HTS Code :
- 8541.21.00.95
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Type :
- FET
- RoHS :
- Details
- Series :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 100 ns
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Number of Terminations :
- 3
- Mounting Style :
- SMD/SMT
- Element Configuration :
- Single
- Turn-On Delay Time :
- 90 ns
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Fall Time (Typ) :
- 450 ns
- Drain to Source Resistance :
- 1 kΩ
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-236AB
- Factory Lead Time :
- 6 Weeks
- Published :
- 2014
- Power Dissipation (Max) :
- 360mW (Ta)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 360mW
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 13mA Tj
- Channel Mode :
- Depletion
- Product :
- MOSFET Small Signal
- Drain to Source Breakdown Voltage :
- 500V
- Feedback Cap-Max (Crss) :
- 1 pF
- Product Type :
- MOSFET
- Width :
- 1.3mm
- Subcategory :
- MOSFETs
- Turn On Delay Time :
- 90 ns
- Min Operating Temperature :
- -55 °C
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 13mA
- Package Shape :
- RECTANGULAR
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- Vgs(th) (Max) @ Id :
- --
- Length :
- 2.9mm
- Power Dissipation-Max :
- 360mW Ta
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 1000 Ω
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- Transistor Type :
- 1 N-Channel
- FET Type :
- N-Channel
- Max Power Dissipation :
- 360 mW
- Max Operating Temperature :
- 150 °C
- Continuous Drain Current Id :
- 13
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Manufacturer :
- Microchip
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On Max :
- 1 kΩ
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1
- Number of Terminals :
- 3
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- JESD-609 Code :
- e3
- Brand :
- Microchip Technology / Atmel
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 25V
- Rise Time :
- 450ns
- Input Capacitance :
- 10 pF
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- LND250
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- JESD-30 Code :
- R-PDSO-G3
- Rds On (Max) @ Id, Vgs :
- 1000 Ω @ 500μA, 0V
- Transistor Application :
- SWITCHING
- Height :
- 950μm
- DS Breakdown Voltage-Min :
- 500 V
- Channel Type :
- N
- FET Feature :
- Depletion Mode
- Mounting Type :
- Surface Mount
- Weight :
- 1.437803g
- Datasheets
- LND250K1-G

N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3
LND250K1-G Overview
The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
LND250K1-G Features
a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)
LND250K1-G Applications
There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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