LND250K1-G
- Mfr.Part #
- LND250K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 13MA SOT23
- Stock
- 2,511
- In Stock :
- 2,511
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 10 pF
- Product Type :
- MOSFET
- Transistor Polarity :
- N-Channel
- Continuous Drain Current Id :
- 13
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Power Dissipation (Max) :
- 360mW (Ta)
- Width :
- 1.3mm
- FET Feature :
- Depletion Mode
- Brand :
- Microchip Technology / Atmel
- Power Dissipation :
- 360mW
- Series :
- --
- Weight :
- 1.437803g
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id :
- --
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Power Dissipation-Max :
- 360mW Ta
- Number of Terminals :
- 3
- Base Product Number :
- LND250
- Number of Channels :
- 1
- Feedback Cap-Max (Crss) :
- 1 pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- Microchip
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- Depletion Mode
- Mounting Style :
- SMD/SMT
- Continuous Drain Current (ID) :
- 13mA
- Mounting Type :
- Surface Mount
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Turn On Delay Time :
- 90 ns
- Drain to Source Resistance :
- 1 kΩ
- Fall Time (Typ) :
- 450 ns
- Surface Mount :
- yes
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Product Status :
- Active
- FET Type :
- N-Channel
- Configuration :
- Single
- Product :
- MOSFET Small Signal
- Rds On Max :
- 1 kΩ
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.9mm
- Reach Compliance Code :
- Compliant
- HTS Code :
- 8541.21.00.95
- Max Operating Temperature :
- 150 °C
- JEDEC-95 Code :
- TO-236AB
- JESD-30 Code :
- R-PDSO-G3
- JESD-609 Code :
- e3
- Channel Type :
- N
- Number of Pins :
- 3
- Turn-On Delay Time :
- 90 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 25V
- Turn-Off Delay Time :
- 100 ns
- Height :
- 950μm
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Product Category :
- MOSFET
- Rise Time :
- 450ns
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- Max Power Dissipation :
- 360 mW
- Published :
- 2014
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Subcategory :
- MOSFETs
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1000 Ω @ 500μA, 0V
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 1000 Ω
- Type :
- FET
- Channel Mode :
- Depletion
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 13mA Tj
- Min Operating Temperature :
- -55 °C
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 6 Weeks
- Datasheets
- LND250K1-G

N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3
LND250K1-G Overview
The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
LND250K1-G Features
a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)
LND250K1-G Applications
There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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