LND250K1-G
- Mfr.Part #
- LND250K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 13MA SOT23
- Stock
- 2,511
- In Stock :
- 2,511
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- Rds On Max :
- 1 kΩ
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2014
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 90 ns
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Height :
- 950μm
- Packaging :
- Tape and Reel (TR)
- Type :
- FET
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current (ID) :
- 13mA
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- --
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 1000 Ω
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Configuration :
- Single
- Turn-On Delay Time :
- 90 ns
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Mounting Style :
- SMD/SMT
- Channel Mode :
- Depletion
- Turn-Off Delay Time :
- 100 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Length :
- 2.9mm
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Number of Channels :
- 1
- Max Power Dissipation :
- 360 mW
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55 °C
- Power Dissipation-Max :
- 360mW Ta
- Drain to Source Breakdown Voltage :
- 500V
- HTS Code :
- 8541.21.00.95
- Product Category :
- MOSFET
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 13mA Tj
- Element Configuration :
- Single
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 25V
- Fall Time (Typ) :
- 450 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 360mW
- Continuous Drain Current Id :
- 13
- Max Operating Temperature :
- 150 °C
- Manufacturer :
- Microchip
- Number of Terminals :
- 3
- Input Capacitance :
- 10 pF
- JEDEC-95 Code :
- TO-236AB
- Product :
- MOSFET Small Signal
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Transistor Polarity :
- N-Channel
- Width :
- 1.3mm
- Mounting Type :
- Surface Mount
- Series :
- --
- Polarity/Channel Type :
- N-Channel
- Feedback Cap-Max (Crss) :
- 1 pF
- Brand :
- Microchip Technology / Atmel
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Operating Mode :
- Depletion Mode
- JESD-30 Code :
- R-PDSO-G3
- FET Feature :
- Depletion Mode
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 360mW (Ta)
- Rds On (Max) @ Id, Vgs :
- 1000 Ω @ 500μA, 0V
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 450ns
- Weight :
- 1.437803g
- Factory Lead Time :
- 6 Weeks
- Base Product Number :
- LND250
- Channel Type :
- N
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Resistance :
- 1 kΩ
- Surface Mount :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- LND250K1-G

N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-236-3, SC-59, SOT-23-3
LND250K1-G Overview
The maximum input capacitance of this device is 10pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1 kΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 90 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
LND250K1-G Features
a continuous drain current (ID) of 13mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 1 kΩ
a 500V drain to source voltage (Vdss)
LND250K1-G Applications
There are a lot of Microchip Technology
LND250K1-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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