LM5111-4M/NOPB
- Mfr.Part #
- LM5111-4M/NOPB
- Manufacturer
- National Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- LM5111 DUAL 5A COMPOUND GATE DRI
- Stock
- 10,303
- In Stock :
- 10,303
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- Manufacturer :
- National Semiconductor
- Product Category :
- Gate Drivers
- Operating Temperature :
- -40°C~125°C TJ
- Packaging :
- Tube
- Driven Configuration :
- Low-Side
- Number of Outputs :
- 2
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- ECCN Code :
- EAR99
- Supply Voltage :
- 12V
- Terminal Finish :
- Matte Tin (Sn)
- Max Output Current :
- 5A
- Number of Functions :
- 1
- Height :
- 1.75mm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Width :
- 3.91mm
- Turn On Time :
- 0.04 µs
- Voltage - Supply :
- 3.5V~14V
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise / Fall Time (Typ) :
- 14ns 12ns
- Propagation Delay :
- 40 ns
- Feature :
- UVLO
- Fall Time (Typ) :
- 25 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Type :
- Independent
- Turn Off Time :
- 0.04 µs
- Number of Terminations :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Thickness :
- 1.58mm
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- LM5111
- Radiation Hardening :
- No
- Input Type :
- Inverting, Non-Inverting
- Current - Peak Output (Source, Sink) :
- 3A 5A
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 40 ns
- Max Supply Current :
- 2mA
- High Side Driver :
- No
- Gate Type :
- N-Channel MOSFET
- Lead Free :
- Lead Free
- Rise Time :
- 25ns
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Surface Mount
- Nominal Supply Current :
- 2mA
- Output Current :
- 5A
- Mount :
- Surface Mount
- Length :
- 4.9mm
- Datasheets
- LM5111-4M/NOPB

[Gate Drivers National Semiconductor LM5111-4M/NOPB] Overview
Introducing the cutting-edge Gate Drivers from National Semiconductor, the LM5111-4M/NOPB. Designed with precision and reliability in mind, these dual 5A compound gate drivers are the epitome of efficiency and performance. Engineered to meet the rigorous demands of modern electronic systems, they offer unparalleled control and stability, making them the ideal choice for a wide range of applications.
LM5111-4M/NOPB Features
- High Performance: The LM5111-4M/NOPB boasts exceptional performance, delivering precise control and rapid response times, ensuring optimal system operation.
- Dual Configuration: With dual 5A compound gate drivers, this product provides versatility and flexibility, accommodating various system configurations with ease.
- Reliable Design: Engineered by National Semiconductor, renowned for their commitment to quality and innovation, these gate drivers offer unparalleled reliability and durability.
- Efficient Operation: Designed for efficiency, the LM5111-4M/NOPB minimizes power consumption while maximizing output, resulting in enhanced system efficiency and reduced operating costs.
- Comprehensive Protection: Equipped with comprehensive protection features, including overcurrent protection and thermal shutdown, these gate drivers safeguard the integrity of connected components, ensuring long-term reliability.
LM5111-4M/NOPB Applications
- Industrial Automation: The LM5111-4M/NOPB is ideally suited for industrial automation systems, providing precise control over motors, valves, and other critical components.
- Renewable Energy: In renewable energy systems such as solar inverters and wind turbines, the LM5111-4M/NOPB plays a crucial role in optimizing power conversion and ensuring maximum energy output.
- Electric Vehicles: For electric vehicle (EV) applications, the LM5111-4M/NOPB offers superior control over the propulsion system, enhancing acceleration, efficiency, and overall performance.
This product can be seamlessly integrated into industrial control panels, enabling efficient and reliable operation in manufacturing facilities, warehouses, and process plants.
By driving MOSFETs and IGBTs with precision, this gate driver enhances the performance and efficiency of renewable energy systems, contributing to a more sustainable future.
With its high current capability and reliable operation, this gate driver enables the seamless integration of advanced motor control technologies in electric vehicles, ensuring a smooth and responsive driving experience.
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