LM5110-2M

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Mfr.Part #
LM5110-2M
Manufacturer
National Semiconductor
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
BUFFER/INVERTER BASED PERIPHERAL
Stock
1,805
In Stock :
1,805

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Manufacturer :
National Semiconductor
Product Category :
Gate Drivers
Height Seated (Max) :
1.753mm
Input Type :
Inverting
Voltage - Supply :
3.5V~14V
Terminal Position :
Dual
Number of Functions :
2
Operating Temperature :
-40°C~125°C TJ
Quiescent Current :
1mA
Nominal Supply Current :
2mA
Channel Type :
Independent
ECCN Code :
EAR99
Number of Outputs :
2
Termination :
SMD/SMT
Number of Pins :
8
Base Part Number :
LM5110
Turn On Time :
0.04 µs
Logic Voltage - VIL, VIH :
0.8V 2.2V
Number of Terminations :
8
Propagation Delay :
40 ns
Max Output Current :
5A
Turn On Delay Time :
40 ns
Fall Time (Typ) :
25 ns
REACH SVHC :
No SVHC
Gate Type :
N-Channel MOSFET
Pin Count :
8
Max Supply Current :
2mA
Interface IC Type :
BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Turn Off Time :
0.04 µs
Packaging :
Tube
RoHS Status :
Non-RoHS Compliant
Pbfree Code :
No
Rise / Fall Time (Typ) :
14ns 12ns
JESD-609 Code :
e0
Output Peak Current Limit-Nom :
5A
Mount :
Surface Mount
Mounting Type :
Surface Mount
Output Current :
5A
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Radiation Hardening :
No
Supply Voltage :
12V
Terminal Form :
Gull wing
Terminal Finish :
Tin/Lead (Sn/Pb)
Rise Time :
25ns
Driven Configuration :
Low-Side
Width :
3.9mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
Current - Peak Output (Source, Sink) :
3A 5A
Built-in Protections :
UNDER VOLTAGE
Peak Reflow Temperature (Cel) :
235
Datasheets
LM5110-2M
Introducing Gate Drivers National Semiconductor LM5110-2M from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~125°C TJ, Number of Pins:8, Base Part Number:LM5110, Number of Terminations:8, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), LM5110-2M pinout, LM5110-2M datasheet PDF, LM5110-2M amp .Beyond Gate Drivers National Semiconductor LM5110-2M ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

National Semiconductor LM5110-2M


Gate Drivers National Semiconductor LM5110-2M Overview

Introducing the LM5110-2M by National Semiconductor, a sophisticated buffer/inverter-based peripheral designed specifically for advanced gate driving applications. This product stands out in the field of Gate Drivers due to its robust design and versatile functionality, catering to a wide range of industrial demands. The LM5110-2M ensures high efficiency and reliability for controlling power MOSFETs and IGBTs, which is critical in high-power switching applications. The use of this gate driver can significantly enhance system performance by improving switching speeds and minimizing losses.

LM5110-2M Features

The LM5110-2M incorporates numerous features that make it an essential component for any high-power electronic switching system. It offers dual outputs which can be configured either as two inverters or as one buffer and one inverter, providing flexibility in application design. Its high peak output current, coupled with a wide supply voltage range, allows for use in a diverse array of operating environments. Additionally, the device includes robust protection features, such as under-voltage lockout, which ensures operational stability and longevity.

LM5110-2M Applications

  • DC-DC Converters: Utilizes dual output capabilities to efficiently manage power control, enhancing converter reliability and performance.
  • Solar Inverters: Applies high peak current and fast switching to optimize power handling in solar energy systems, improving efficiency and energy output.
  • Motor Control Systems: Enhances precision in high-frequency motor drives by providing effective gate driving for MOSFETs and IGBTs, crucial for accurate speed and torque control.
  • Power Management Systems: Employs robust under-voltage protection to ensure consistent performance and safety in complex power management solutions.
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