LM5110-2M
- Mfr.Part #
- LM5110-2M
- Manufacturer
- National Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- BUFFER/INVERTER BASED PERIPHERAL
- Stock
- 1,805
- In Stock :
- 1,805
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- Manufacturer :
- National Semiconductor
- Product Category :
- Gate Drivers
- Height Seated (Max) :
- 1.753mm
- Input Type :
- Inverting
- Voltage - Supply :
- 3.5V~14V
- Terminal Position :
- Dual
- Number of Functions :
- 2
- Operating Temperature :
- -40°C~125°C TJ
- Quiescent Current :
- 1mA
- Nominal Supply Current :
- 2mA
- Channel Type :
- Independent
- ECCN Code :
- EAR99
- Number of Outputs :
- 2
- Termination :
- SMD/SMT
- Number of Pins :
- 8
- Base Part Number :
- LM5110
- Turn On Time :
- 0.04 µs
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Number of Terminations :
- 8
- Propagation Delay :
- 40 ns
- Max Output Current :
- 5A
- Turn On Delay Time :
- 40 ns
- Fall Time (Typ) :
- 25 ns
- REACH SVHC :
- No SVHC
- Gate Type :
- N-Channel MOSFET
- Pin Count :
- 8
- Max Supply Current :
- 2mA
- Interface IC Type :
- BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Turn Off Time :
- 0.04 µs
- Packaging :
- Tube
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Rise / Fall Time (Typ) :
- 14ns 12ns
- JESD-609 Code :
- e0
- Output Peak Current Limit-Nom :
- 5A
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Output Current :
- 5A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- Supply Voltage :
- 12V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Rise Time :
- 25ns
- Driven Configuration :
- Low-Side
- Width :
- 3.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Current - Peak Output (Source, Sink) :
- 3A 5A
- Built-in Protections :
- UNDER VOLTAGE
- Peak Reflow Temperature (Cel) :
- 235
- Datasheets
- LM5110-2M

Gate Drivers National Semiconductor LM5110-2M Overview
Introducing the LM5110-2M by National Semiconductor, a sophisticated buffer/inverter-based peripheral designed specifically for advanced gate driving applications. This product stands out in the field of Gate Drivers due to its robust design and versatile functionality, catering to a wide range of industrial demands. The LM5110-2M ensures high efficiency and reliability for controlling power MOSFETs and IGBTs, which is critical in high-power switching applications. The use of this gate driver can significantly enhance system performance by improving switching speeds and minimizing losses.
LM5110-2M Features
The LM5110-2M incorporates numerous features that make it an essential component for any high-power electronic switching system. It offers dual outputs which can be configured either as two inverters or as one buffer and one inverter, providing flexibility in application design. Its high peak output current, coupled with a wide supply voltage range, allows for use in a diverse array of operating environments. Additionally, the device includes robust protection features, such as under-voltage lockout, which ensures operational stability and longevity.
LM5110-2M Applications
- DC-DC Converters: Utilizes dual output capabilities to efficiently manage power control, enhancing converter reliability and performance.
- Solar Inverters: Applies high peak current and fast switching to optimize power handling in solar energy systems, improving efficiency and energy output.
- Motor Control Systems: Enhances precision in high-frequency motor drives by providing effective gate driving for MOSFETs and IGBTs, crucial for accurate speed and torque control.
- Power Management Systems: Employs robust under-voltage protection to ensure consistent performance and safety in complex power management solutions.
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