LM5110-2M
- Mfr.Part #
- LM5110-2M
- Manufacturer
- National Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- BUFFER/INVERTER BASED PERIPHERAL
- Stock
- 1,805
- In Stock :
- 1,805
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- Manufacturer :
- National Semiconductor
- Product Category :
- Gate Drivers
- Packaging :
- Tube
- Built-in Protections :
- UNDER VOLTAGE
- Number of Outputs :
- 2
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Form :
- Gull wing
- Input Type :
- Inverting
- Turn Off Time :
- 0.04 µs
- Radiation Hardening :
- No
- Pin Count :
- 8
- Base Part Number :
- LM5110
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- Output Peak Current Limit-Nom :
- 5A
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 235
- REACH SVHC :
- No SVHC
- Max Supply Current :
- 2mA
- Height Seated (Max) :
- 1.753mm
- Output Current :
- 5A
- Voltage - Supply :
- 3.5V~14V
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Interface IC Type :
- BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Supply Voltage :
- 12V
- Channel Type :
- Independent
- Rise Time :
- 25ns
- Fall Time (Typ) :
- 25 ns
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Propagation Delay :
- 40 ns
- Number of Functions :
- 2
- Current - Peak Output (Source, Sink) :
- 3A 5A
- Turn On Time :
- 0.04 µs
- RoHS Status :
- Non-RoHS Compliant
- Gate Type :
- N-Channel MOSFET
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Width :
- 3.9mm
- Terminal Position :
- Dual
- Driven Configuration :
- Low-Side
- Max Output Current :
- 5A
- Nominal Supply Current :
- 2mA
- Quiescent Current :
- 1mA
- Operating Temperature :
- -40°C~125°C TJ
- Rise / Fall Time (Typ) :
- 14ns 12ns
- Termination :
- SMD/SMT
- Turn On Delay Time :
- 40 ns
- Datasheets
- LM5110-2M
LM5110-2M Documents

Gate Drivers National Semiconductor LM5110-2M Overview
Introducing the LM5110-2M by National Semiconductor, a sophisticated buffer/inverter-based peripheral designed specifically for advanced gate driving applications. This product stands out in the field of Gate Drivers due to its robust design and versatile functionality, catering to a wide range of industrial demands. The LM5110-2M ensures high efficiency and reliability for controlling power MOSFETs and IGBTs, which is critical in high-power switching applications. The use of this gate driver can significantly enhance system performance by improving switching speeds and minimizing losses.
LM5110-2M Features
The LM5110-2M incorporates numerous features that make it an essential component for any high-power electronic switching system. It offers dual outputs which can be configured either as two inverters or as one buffer and one inverter, providing flexibility in application design. Its high peak output current, coupled with a wide supply voltage range, allows for use in a diverse array of operating environments. Additionally, the device includes robust protection features, such as under-voltage lockout, which ensures operational stability and longevity.
LM5110-2M Applications
- DC-DC Converters: Utilizes dual output capabilities to efficiently manage power control, enhancing converter reliability and performance.
- Solar Inverters: Applies high peak current and fast switching to optimize power handling in solar energy systems, improving efficiency and energy output.
- Motor Control Systems: Enhances precision in high-frequency motor drives by providing effective gate driving for MOSFETs and IGBTs, crucial for accurate speed and torque control.
- Power Management Systems: Employs robust under-voltage protection to ensure consistent performance and safety in complex power management solutions.
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