L6391DTR
- Mfr.Part #
- L6391DTR
- Manufacturer
- STMicroelectronics
- Package / Case
- 14-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 14SO
- Stock
- 2,475
- In Stock :
- 2,475
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Gate Drivers
- Number of Drivers :
- 2
- Supply Voltage :
- 15V
- Logic Voltage - VIL, VIH :
- 1.1V 1.9V
- Length :
- 8.65mm
- Current - Peak Output (Source, Sink) :
- 290mA 430mA
- Rise Time :
- 120ns
- Frequency :
- 800kHz
- RoHS Status :
- ROHS3 Compliant
- Number of Functions :
- 1
- Mount :
- Surface Mount
- Operating Temperature :
- -40°C~150°C TJ
- ECCN Code :
- EAR99
- Base Part Number :
- L6391
- Terminal Form :
- Gull wing
- Package / Case :
- 14-SOIC (0.154, 3.90mm Width)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- High Side Voltage - Max (Bootstrap) :
- 600V
- Mounting Type :
- Surface Mount
- Width :
- 3.9mm
- Input Type :
- Non-Inverting
- Power Supplies :
- 15V
- Rise / Fall Time (Typ) :
- 75ns 35ns
- Number of Terminations :
- 14
- JESD-609 Code :
- e4
- Fall Time (Typ) :
- 70 ns
- Channel Type :
- Independent
- Peak Reflow Temperature (Cel) :
- 260
- Gate Type :
- IGBT, N-Channel MOSFET
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Pins :
- 14
- Max Output Current :
- 290mA
- Packaging :
- Tape and Reel (TR)
- Driven Configuration :
- Half-Bridge
- Turn On Delay Time :
- 200 ns
- High Side Driver :
- yes
- Lead Free :
- Lead Free
- Height Seated (Max) :
- 1.75mm
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Max Power Dissipation :
- 800mW
- Power Dissipation :
- 800mW
- Voltage - Supply :
- 12.5V~20V
- Radiation Hardening :
- No
- Pin Count :
- 14
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Propagation Delay :
- 200 ns
- Datasheets
- L6391DTR

Gate Drivers STMicroelectronics L6391DTR Overview
The L6391DTR from STMicroelectronics is a sophisticated half-bridge gate driver designed to meet the demanding requirements of high-efficiency motor control and power conversion systems. As an integral component in the family of Gate Drivers, this IC ensures robust operation with its advanced features tailored for driving both high-side and low-side power MOSFETs and IGBTs. Ideal for applications requiring reliable and high-speed switching performance, the L6391DTR enhances system reliability and power efficiency, making it a pivotal component for developers aiming to optimize their power management solutions.
L6391DTR Features
The L6391DTR gate driver incorporates several key features that make it highly valuable in complex electronic systems. These include an integrated bootstrap diode, high-voltage capability up to 600V, and a range of built-in protective features like under-voltage lockout, dead-time insertion, and thermal shutdown. Additionally, its ability to operate over a wide temperature range and low quiescent current draw are critical for energy-sensitive applications.
L6391DTR Applications
- Brushless DC Motors: Facilitates high-frequency PWM signal driving, ensuring efficient and precise control necessary for applications in automotive and industrial automation.
- Industrial Automation: Employs robust gate driving capabilities to manage high power and precision required in automated machinery and robotic systems.
- Power Supplies: Utilizes half-bridge configuration to improve the efficiency of AC to DC converters, which are crucial in server farms and telecom infrastructures.
- Renewable Energy Systems: Supports the management of power inverter stages in solar converters, enhancing energy conversion efficiency and system reliability in harsh environmental conditions.
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