L6391D

Manufacturer :

STMicroelectronics

Product Category :

Gate Drivers

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Driven Configuration :

Half-Bridge

Lead Free :

Lead Free

Propagation Delay :

200 ns

Terminal Position :

Dual

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Current - Peak Output (Source, Sink) :

290mA 430mA

Turn On Delay Time :

200 ns

Max Power Dissipation :

800mW

Frequency :

800kHz

Gate Type :

IGBT, N-Channel MOSFET

Input Type :

Non-Inverting

Rise Time :

120ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

70 ns

Channel Type :

Independent

Number of Drivers :

2

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Max Output Current :

430mA

Pin Count :

14

Supply Voltage :

15V

Base Part Number :

L6391

Packaging :

Tube

Nominal Supply Current :

100μA

Number of Terminations :

14

Rise / Fall Time (Typ) :

75ns 35ns

Package / Case :

14-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Width :

4mm

Number of Functions :

1

Number of Pins :

14

JESD-609 Code :

e4

Turn-Off Delay Time :

200 ns

High Side Voltage - Max (Bootstrap) :

600V

Output Current :

290mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Length :

8.75mm

Height :

1.65mm

Terminal Form :

Gull wing

Logic Voltage - VIL, VIH :

1.1V 1.9V

High Side Driver :

yes

Voltage - Supply :

12.5V~20V

Power Supplies :

15V

Output Voltage :

580V

Power Dissipation :

800mW