KSD471AYTA
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- Mfr.Part #
- KSD471AYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 48,024
- In Stock ：
- 48,024
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 800mW
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 1A
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSD471
- Power Dissipation :
- 800mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 130MHz
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 130MHz
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Max Breakdown Voltage :
- 30V
- hFE Min :
- 120
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Transition Frequency :
- 130MHz
- Published :
- 2007
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Pbfree Code :
- yes
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Datasheets
- KSD471AYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD471AYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSD471AYTA Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471AYTA Applications
There are a lot of ON Semiconductor
KSD471AYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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