KSD471ACYTA
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- Mfr.Part #
- KSD471ACYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 21,361
- In Stock ：
- 21,361
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Max Power Dissipation :
- 800mW
- Max Breakdown Voltage :
- 30V
- Length :
- 5.2mm
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 7 Weeks
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- hFE Min :
- 120
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSD471
- Power Dissipation :
- 800mW
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 30V
- Mount :
- Through Hole
- Width :
- 4.19mm
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Box (TB)
- Height :
- 5.33mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transition Frequency :
- 130MHz
- ECCN Code :
- EAR99
- Weight :
- 240mg
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- 1A
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 130MHz
- Frequency :
- 130MHz
- Datasheets
- KSD471ACYTA
KSD471ACYTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD471ACYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSD471ACYTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471ACYTA Applications
There are a lot of ON Semiconductor
KSD471ACYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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