KSD471ACYTA
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- Mfr.Part #
- KSD471ACYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 21,361
- In Stock ：
- 21,361
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2007
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 800mW
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Height :
- 5.33mm
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 4.19mm
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 130MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Element Configuration :
- Single
- Base Part Number :
- KSD471
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Length :
- 5.2mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 130MHz
- Number of Pins :
- 3
- Weight :
- 240mg
- Current Rating :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 40V
- Gain Bandwidth Product :
- 130MHz
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 7 Weeks
- Pbfree Code :
- yes
- hFE Min :
- 120
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Datasheets
- KSD471ACYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD471ACYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSD471ACYTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471ACYTA Applications
There are a lot of ON Semiconductor
KSD471ACYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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